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PDF HAF2021S Data sheet ( Hoja de datos )
| Número de pieza | HAF2021S | |
| Descripción | Silicon N-Channel MOSFET | |
| Fabricantes | Renesas | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de HAF2021S (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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HAF2021(L), HAF2021(S)
Silicon N Channel MOS FET Series
Power Switching
REJ03G0179-0200Z
(Previous ADE-208-1459A(Z))
Rev.2.00
Mar.05.2004
Description
This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in
over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc.
Features
• Logic level operation (6 V Gate drive)
• High endurance capability against to the short circuit
• Built–in the over temperature shut–down circuit
• Latch type shut–down operation (Need 0 voltage recovery)
Outline
LDPAK
D
G Gate resistor
Temperature
Sensing Circuit
www.DataSheet4U.com
Latch
Circuit
Gate
Shut-down
Circuit
S
44
1
2
3
1
2
3
1. Gate
2. Drain
3. Source
4. Drain
Rev.2.00, Mar.05.2004, page 1 of 8
1 page  
HAF2021(L), HAF2021(S)
Static Drain to Source State Resistance
vs. Temperature
25
Pulse Test
20
25 A, 10 A
15
ID = 50 A
VGS = 6 V
10
ID = 50 A
25 A, 10 A
5 VGS = 10 V
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
1000
500
Body to Drain Diode Reverse
Recovery Time
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
200
100
50
20
10
12
5 10 20 50 100
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Reverse Drain Current IDR (A)
Reverse Drain Current vs.
Source to Drain Voltage
50
Pulse Test
40
30
20
VGS = 5 V
10
0, -5 V
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Forward Transfer Admittance vs.
Drain Current
100
50
VDS = 10 V
Pulse Test
20 Tc = -25°C
10
5
2 25°C
1
75°C
0.5
0.2
0.1
0.1
0.5 1
5 10
50 100
Drain Current ID (A)
1000
500
200
Switching Characteristics
VGS = 10 V, VDD = 30 V
PW = 300 µs, duty < 1 %
100 tr
50
td(on)
20
10
td(off)
5
2
1
0.5 1
tf
5 10
50 100
Drain Current ID (A)
500
10000
Typical Capacitance vs.
Drain to Source Voltage
1000
Coss
100
VGS = 0
f = 1 MHz
10
0 10 20 30 40 50
Drain to Source Voltage VDS (V)
Rev.2.00, Mar.05.2004, page 5 of 8
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet HAF2021S.PDF ] | |
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