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PDF STF8236 Data sheet ( Hoja de datos )
| Número de pieza | STF8236 | |
| Descripción | Dual N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | SamHop Microelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de STF8236 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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STF8236Green
Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
20V
ID RDS(ON) (mΩ) Max
22.0 @ VGS=4.5V
22.5 @ VGS=4.0V
6A 23.0 @ VGS=3.7V
25.0 @ VGS=3.1V
29.0 @ VGS=2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
PIN 1
S1
S1
G1
D1/D2
S2
S2
G2
DFN 2X2
Bottom Drain Contact (D1/D2)
G1 3
4 G2
S1 2
5 S2
S1 1
6 S2
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol
VDS
VGS
ID
IDM
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous c
-Pulsed a c
TA=25°C
TA=70°C
PD
Maximum Power Dissipation
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
Limit
20
±12
6
4.8
36
1.4
0.9
-55 to 150
90
Units
V
V
A
A
A
W
W
°C
°C/W
Details are subject to change without notice.
1
Oct,24,2014
www.samhop.com.tw
1 page  
STF8236
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
50
VGS = 2.5 V , ID = 1.5A
40
VGS = 3.1 V , ID = 3.0A
VGS = 3.7 V , ID = 3.0A
30
VGS = 4.0 V , ID = 3.0A
20
VGS = 4.5 V , ID = 3.0A
10
0
-50 0 50 100 150
Tch - Channel Temperature - °C
DYNAMIC INPUT CHARACTERISTICS
4
VDD = 4 V
3 10 V
16 V
2
1
ID = 6 A
0
0 2 4 6 8 10
QG - Gate Charge -nC
Ver 1.0
SWITCHING CHARACTERISTICS
100
td(off)
tf
tr
10 td(on)
VDD = 16 V
VGS = 4.5V
RG = 6 Ω
1
0.1
1
ID - Drain Current - A
10
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
10
1
0.1
VGS = 0 V
0.01
0 0.3 0.6 0.9 1.2 1.5 1.8
VF(S-D) - Source to Drain Voltage - V
Oct,24,2014
5 www.samhop.com.tw
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet STF8236.PDF ] | |
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