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PDF CBR35-060P Datasheet ( Hoja de datos )

Número de pieza CBR35-060P
Descripción SILICON BRIDGE RECTIFIERS
Fabricantes Central Semiconductor 
Logotipo Central Semiconductor Logotipo

Total 2 Páginas
		
CBR35-060P Hoja de datos, Descripción, Manual
CBR35-010P SERIES
SILICON BRIDGE RECTIFIERS
35 AMP, 100 THRU 1000 VOLT
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBR35-010P series
devices are silicon, single phase, full wave bridge rectifiers
designed for general purpose applications. The molded
epoxy case has a built-in metal baseplate for heat sink
mounting. The device utilizes standard 0.25” FASTON
terminals.
CASE FP
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL -010P
Peak Repetitive Reverse Voltage
VRRM 100
DC Blocking Voltage
VR 100
RMS Reverse Voltage
VR(RMS) 70
Average Forward Current (TC=60°C)
IO
Peak Forward Surge Current
IFSM
I2t Rating for Fusing (1ms<t<8.3ms)
I2t
-020P
200
200
140
RMS Isolation Voltage (case to lead)
Operating and Storage
Junction Temperature
Thermal Resistance
Viso
TJ, Tstg
ΘJC
CBR35
-040P -060P
400 600
400 600
280 420
35
400
660
2500
-65 to +150
1.4
-080P
800
800
560
-100P
1000
1000
700
UNITS
V
V
V
A
A
A2s
Vac
°C
°C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
TYP MAX
IR VR=Rated VRRM
10
IR VR=Rated VRRM, TA=125°C
500
VF IF=17.5A
1.2
CJ VR=4.0V, f=1.0MHz
300
UNITS
μA
μA
V
pF
R3 (24-June 2013)

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