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Número de pieza | BCR16CM-12LB | |
Descripción | Triac | |
Fabricantes | Renesas | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BCR16CM-12LB (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! BCR16CM-12LB
600V - 16A - Triac
Medium Power Use
Preliminary Datasheet
R07DS1032EJ0400
(Previous: REJ03G0457-0300)
Rev.4.00
Feb 25, 2013
Features
IT (RMS) : 16 A
VDRM : 600 V
IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6
Outline
Non-Insulated Type
Planar Passivation Type
RENESAS Package code: PRSS0004AG-A
(Package name: TO-220AB)
4
123
RENESAS Package code: PRSS0004AA-A
(Package name: TO-220)
4
2, 4
123
3
1
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
4. T2 Terminal
Applications
Contactless AC switch, light dimmer, electronic flasher unit, control of household equipment such as TV sets, stereo
systems, refrigerator, washing machine, infrared kotatsu, carpet, electric fan, solenoid driver, small motor control,
copying machine, electric tool, electric heater control, and other general purpose control applications
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
Symbol
IT (RMS)
ITSM
I2t
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Symbol
VDRM
VDSM
Ratings
16
170
121
5.0
0.5
10
2
– 40 to +150
– 40 to +150
2.1
Voltage class
12
600
720
Unit
V
V
Unit
A
A
A2s
W
W
V
A
C
C
g
Conditions
Commercial frequency, sine full wave
360° conduction, Tc = 125CNote3
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
R07DS1032EJ0400 Rev.4.00
Feb 25, 2013
Page 1 of 8
1 page BCR16CM-12LB
Latching Current vs.
Junction Temperature
103
7
5
3 Distribution T2+, G–
2 Typical Example
102
7
5
3
2
101
7
5
3
2
T2+, G+
T2–, G–
Typical Example
100
–40
0
40 80
120
160
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
160
Typical Example
140 Tj = 125°C
120
100 III Quadrant
80
60 I Quadrant
40
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Rate of Rise of Off-State Voltage (V/μs)
Commutation Characteristics (Tj=125°C)
102
7
5
Main Voltage
(dv/dt)c
Time
VD
Typical Example
Tj = 125°C
Main Current
3 IT
2
τ
(di/dt)c
Time
IT = 4A
τ = 500μs
VD = 200V
f = 3Hz
101
7 Minimum
5
Characteristics
Value
III Quadrant
3
2 I Quadrant
100
7
3
5 7 101
23
5 7 102
23
Rate of Decay of On-State
Commutating Current (A/ms)
R07DS1032EJ0400 Rev.4.00
Feb 25, 2013
Preliminary
Breakover Voltage vs.
Junction Temperature
160
Typical Example
140
120
100
80
60
40
20
0
–60–40–20 0 20 40 60 80 100120 140160
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
160
Typical Example
140 Tj = 150°C
120
100
III Quadrant
80
60
40 I Quadrant
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Rate of Rise of Off-State Voltage (V/μs)
Commutation Characteristics (Tj=150°C)
102
7
5
Typical Example Main Voltage
Tj = 150°C
(dv/dt)c
Time
VD
IT = 4A
3 τ = 500μs
2 VD = 200V
Main Current
IT
(di/dt)c
τ Time
f = 3Hz
101
7
5
3
2 I Quadrant
100
III Quadrant
Minimum
Characteristics
Value
7
3 5 7 101 2 3 5 7 102 2 3
Rate of Decay of On-State
Commutating Current (A/ms)
Page 5 of 8
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet BCR16CM-12LB.PDF ] |
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