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PDF AWB7128 Data sheet ( Hoja de datos )

Número de pieza AWB7128
Descripción Small-Cell Power Amplifier Module
Fabricantes ANADIGICS 
Logotipo ANADIGICS Logotipo



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No Preview Available ! AWB7128 Hoja de datos, Descripción, Manual

FEATURES
InGaP HBT Technology
-47 dBc ACPR @ + 10 MHz, +24.5 dBm
28 dB Gain
High Efficiency
Low Transistor Junction Temperature
Internally matched for a 50 System
Low Profile Miniature Surface Mount Package;
Halogen Free and RoHS Compliant
Multi-Carrier Capability
APPLICATIONS
WCDMA, HSDPA and LTE Air Interfaces
FDD and TDD Systems
Picocell, Femtocell, Home Nodes
Customer Premises Equipment (CPE)
Data Cards and Terminals
AWB7128
2.545 GHz through 2.69 GHz
Small-Cell Power Amplifier Module
PRELIMINARY DATA SHEET - Rev 1.3
14 Pin 7 mm x 7 mm x 1.3 mm
Surface Mount Module
PRODUCT DESCRIPTION
The AWB7128 is a highly linear, fully matched, power
amplifier module designed for picocell, femtocell, and
customer premises equipment (CPE) applications.
Its high power efficiency and low adjacent channel
power levels meet the extremely demanding needs
of small cell infrastructure architectures. Designed
for WCDMA, HSDPA and LTE air interfaces operating
in the 2.545 GHz to 2.69 GHz band, the AWB7128
delivers up to +24.5 dBm of LTE (E-TM1.1) power with
Supply
Voltage
an ACPR of -47 dBc. It operates from a convenient
+4.2 V supply and provides 28 dB of gain. The
device is manufactured using an advanced InGaP
HBT MMIC technology offering state-of-the-art
reliability, temperature stability, and ruggedness.
The self-contained 7 mm x 7 mm x 1.3 mm surface
mount package incorporates RF matching networks
optimized for output power, efficiency, and linearity in
a 50 Ω system.
Supply
Voltage
RF
Input
Matching
Network
Bias
Control
Matching
Network
Power
Detector
RF
Output
Bias
Detector
Voltage
Output
Figure 1: Block Diagram
11/2012

1 page




AWB7128 pdf
AWB7128
APPLICATION INFORMATION
To ensure proper performance, refer to all related
Application Notes on the ANADIGICS web site:
http://www.anadigics.com
Shutdown Mode
The power amplifier may be placed in a shutdown
mode by applying logic low levels (see Operating
Ranges table) to the VREF voltage.
C1C515anand CC1111: See nnoot te
VRE F
C15 C11
0.1 µF
1000 pF
Vcc1C1* C2* C3
C4
100µF 10 µF 0.1µF 1000 pF
RFI N
VDET
R2
100 K
C6
0.1µF
4.7 K
R1
1VR E F
GND 2
GND 3
Vcc1
RFI N
4
5
GND 6
7VDET
AWB7128
14 GND
13 GND
12 RFOUT
11 Vcc2
10 GND
9 GND
C7
1000 pF
C8 C9*
0.1µF 10 µF
8 GND
RFOUT
C10*
Vcc2
C12*
100 µF 100 µF
* Optional
Note:
To achieve the RF Switching Time specifications listed in Table 4 the maximum recommended
capacitance on the VREF line is 0.01µF. The noise on the VREF line should be kept as low as
possible to minimize required capacitance.
Figure 3: Application Circuit Schematic
5
PRELIMINARY DATA SHEET - Rev 1.3
11/2012

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