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PDF VS-42CTQ030-N3 Data sheet ( Hoja de datos )

Número de pieza VS-42CTQ030-N3
Descripción Schottky Rectifier ( Diode )
Fabricantes Vishay 
Logotipo Vishay Logotipo



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www.vishay.com
VS-42CTQ030PbF, VS-42CTQ030-N3
Vishay Semiconductors
Schottky Rectifier, 2 x 20 A
Base 2
common
cathode
TO-220AB
Anode
2 Anode
1 Common 3
cathode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM max.
TJ max.
Diode variation
EAS
TO-220AB
2 x 20 A
30 V
0.38 V
183 mA at 125 °C
150 °C
Common cathode
13 mJ
FEATURES
• 150 °C TJ operation
• Very low forward voltage drop
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• High frequency operation
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
This center tap Schottky rectifier has been optimized for very
low forward voltage drop, with moderate leakage. The
proprietary barrier technology allows for reliable operation up
to 150 °C junction temperature. Typical applications are in
switching power supplies, converters, freewheeling diodes,
and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICSL
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
TJ
Rectangular waveform
tp = 5 μs sine
20 Apk, TJ = 125 °C (per leg)
Range
VALUES
40
30
1100
0.38
- 55 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-42CTQ030PbF VS-142TQ030-N3
30 30
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average
forward current
See fig. 5
per leg
per device
IF(AV)
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
Non-repetitive avalanche energy per leg
IFSM
EAS
Repetitive avalanche current per leg
IAR
TEST CONDITIONS
50 % duty cycle at TC = 121 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
TJ = 25 °C, IAS = 3 A, L = 2.90 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
20
40
1100
360
13
3
UNITS
A
mJ
A
Revision: 29-Aug-11
1 Document Number: 94220
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 page




VS-42CTQ030-N3 pdf
www.vishay.com
VS-42CTQ030PbF, VS-42CTQ030-N3
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code VS- 42 C T Q 030 PbF
12 3 4 567
1 - Vishay Semiconductors product
2 - Current rating (40 A)
3 - Circuit configuration
C = Common cathode
4 - Package
T = TO-220
5 - Schottky “Q” series
6 - Voltage rating (030 = 30 V)
7 - Environmental digit
PbF = Lead (Pb)-free and RoHS compliant
-N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
VS-42CTQ030PbF
50
VS-42CTQ030-N3
50
MINIMUM ORDER QUANTITY
1000
1000
PACKAGING DESCRIPTION
Antistatic plastic tube
Antistatic plastic tube
Dimensions
Part marking information
LINKS TO RELATED DOCUMENTS
www.vishay.com/doc?95222
TO-220AB PbF
www.vishay.com/doc?95225
TO-220AB -N3
www.vishay.com/doc?95028
Revision: 29-Aug-11
5 Document Number: 94220
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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