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PDF VS-100BGQ015 Data sheet ( Hoja de datos )

Número de pieza VS-100BGQ015
Descripción Schottky Rectifier ( Diode )
Fabricantes Vishay 
Logotipo Vishay Logotipo



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No Preview Available ! VS-100BGQ015 Hoja de datos, Descripción, Manual

www.vishay.com
VS-100BGQ015
Vishay Semiconductors
Schottky Rectifier, 100 A
Cathode
Anode
PowerTab®
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM
TJ max.
Diode variation
EAS
PowerTab®
100 A
15 V
0.45 V
870 mA at 100 °C
125 °C
Single die
9 mJ
FEATURES
• Ultralow forward voltage drop
• Optimized for OR-ing applications
• Guard ring for enhanced ruggedness and
long term reliability
• Screw mounting only
• Designed and qualified according to
JEDEC-JESD47
• 125 °C max. operating junction temperature (VR < 5 V)
• High frequency operation
• Continuous high current operation
• PowerTab® package
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
The VS-100BGQ015 Schottky rectifier has been optimized
for ultralow forward voltage drop specifically for the OR-ing
of parallel power supplies. The proprietary barrier
technology allows for reliable operation up to 125 °C
junction temperature. Typical applications are in parallel
switching power supplies, converters, reverse battery
protection, and redundant power subsystems.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
Rectangular waveform
TC
IFSM tp = 5 μs sine
100 Apk (typical)
VF
TJ
TJ Range
VALUES
100
88
15
5000
0.39
125
- 55 to 125
UNITS
A
°C
V
A
V
°C
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
SYMBOL
VR
TEST CONDITIONS
TJ = 100 °C
TJ = 125 °C
VS-100BGQ015
15
5
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
IF(AV)
Maximum peak one cycle
non-repetitive surge current
IFSM
Non-repetitive avalanche energy
Repetitive avalanche current
EAS
IAR
TEST CONDITIONS
50 % duty cycle at TC = 88 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
TJ = 25 °C, IAS = 2 A, L = 4.5 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 3 x VR typical
VALUES
100
5000
1000
9
2
UNITS
A
A
mJ
A
Revision: 15-Jun-11
1 Document Number: 94578
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 page




VS-100BGQ015 pdf
www.vishay.com
ORDERING INFORMATION TABLE
VS-100BGQ015
Vishay Semiconductors
Device code VS- 100 BGQ 015
Dimensions
Part marking information
SPICE model
Application note
1234
1 - Vishay Semiconductors product
2 - Current rating
3 - Essential part number
4 - Voltage code = VRRM
LINKS TO RELATED DOCUMENTS
www.vishay.com/doc?95240
www.vishay.com/doc?95370
www.vishay.com/doc?95428
www.vishay.com/doc?95179
Revision: 15-Jun-11
5 Document Number: 94578
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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