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PDF BAV70 Data sheet ( Hoja de datos )
| Número de pieza | BAV70 | |
| Descripción | SILICON PLANAR DUAL SWITCHING DIODES | |
| Fabricantes | CDIL | |
| Logotipo |  |
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 1. 100V, Switching Diode - NXP  Hay una vista previa y un enlace de descarga de BAV70 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR DUAL SWITCHING DIODES
3
Pin Configuration
1 = ANODE
2 = ANODE
3 = CATHODE
12
BAV70
SOT-23
Formed SMD Package
For Lead Free Parts, Device Part #
will be Prefixed with "T"
Marking
BAV70 = A4
High-Speed Switching Dual Diodes, Common Cathode
ABSOLUTE MAXIMUM RATINGS (Rating Per Diode)
DESCRIPTION
Continuous Reverse Voltage
SYMBOL
VR
Repetitive Peak Reverse Voltage
Forward Current (DC)
Repetitive Peak Forward Current
VRRM
IF
IFRM
Non Repetitive Peak Forward Current
(per crystal)
t=1 µs
t=1 ms
IFSM
IFSM
t=1 s
IFSM
Power Dissipation up to Ta=25ºC
Storage Temperature Range
Junction Temperature
PD
Tstg
Tj
VALUE
70
75
215
450
4.0
1.0
0.5
250
- 55 to +150
150
THERMAL RESISTANCE
Junction to Ambient in free air
Rth (j-a)
500
ELECTRICAL CHARACTERISTICS (Ta=25º C unless specified otherwise) per diode
DESCRIPTION
Forward Voltage
Reverse Current
Diode Capacitance
Forward Recovery Voltage
Reverse Recovery Time
SYMBOL TEST CONDITION
MIN MAX
VF IF = 1mA
IF = 10mA
IF = 50mA
IF = 150mA
IR VR=25V, TJ=150ºC
0.715
0.855
1.0
1.25
60
VR=70V
VR=70V, TJ=150ºC
2.5
100
Cd VR=0V, f=1MHz
1.5
Vfr IF=10mA, tr=20ns
1.75
trr
IF=10mA, to IR=60mA,
IR=1.0mA, RL=100Ω
4.0
Reverse Charge When Switched Time
QS
IF=10mA to VR=5V,
RL=100Ω
45
BAV70REV_1 071105E
Continental Device India Limited
Data Sheet
UNIT
V
V
mA
mA
A
A
A
mW
ºC
ºC
K/W
UNIT
V
V
V
V
µA
µA
µA
pF
V
ns
pC
Page 1 of 3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet BAV70.PDF ] | |
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