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PDF RJK0636JPD Data sheet ( Hoja de datos )
| Número de pieza | RJK0636JPD | |
| Descripción | Silicon N-Channel MOS FET | |
| Fabricantes | Renesas | |
| Logotipo |  |
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RJK0636JPD
60 V - 25 A - N Channel Power MOS FET
High Speed Power Switching
Preliminary Datasheet
R07DS0365EJ0200
Rev.2.00
Aug 29, 2012
Features
For Automotive application
AEC-Q101 compliant
Low on-resistance : RDS(on) = 18 m typ.
Capable of 4.5 V gate drive
Low input capacitance : Ciss = 750 pF typ
Outline
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S))
4
2, 4
D
123
1G
1. Gate
2. Drain
3. Source
4. Drain
S
3
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Tch = 25C, Rg 50
3. Tc = 25C
4. AEC-Q101 compliant
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note2
EAR Note2
Pch Note3
Tch Note4
Tstg
Thermal Impedance Characteristics
Channel to case thermal impedance ch-c: 5°C/W
Ratings
60
±20
25
100
25
19
30.9
30
175
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
C
C
R07DS0365EJ0200 Rev.2.00
Aug 29, 2012
Page 1 of 6
1 page  
RJK0636JPD
Normalized Transient Thermal Impedance vs. Pulse Width
10
Preliminary
1 D=1
0.5
0.2
0.1
0.1 0.05
0.01 0.02 0.01
1shot pulse
0.001
10 μ
100 μ
θch – c(t) = γs (t) • θch – c
θch – c = 5°C/W, Tc = 25°C
PDM
D
=
PW
T
PW
T
1m
10 m
100 m
Pulse Width PW (s)
Vin
15 V
Avalanche Test Circuit
VDS
Monitor
Rg
L
IAP
Monitor
D. U. T
VDD
50 Ω
Avalanche Waveform
EAR = 1 L • IAP2 •
2
VDSS
VDSS – VDD
IAP
ID
V (BR)DSS
VDS
VDD
0
Switching Time Test Circuit
Vin Monitor
Rg
D.U.T.
Vout
Monitor
RL
Vin
10 V
VDS
= 30 V
Switching Time Waveform
90%
Vin
Vout
10%
10%
10%
90%
90%
td(on)
tr td(off)
tf
R07DS0365EJ0200 Rev.2.00
Aug 29, 2012
Page 5 of 6
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet RJK0636JPD.PDF ] | |
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