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PDF VS-80CPU02-F3 Data sheet ( Hoja de datos )
| Número de pieza | VS-80CPU02-F3 | |
| Descripción | Ultrafast Rectifier ( Diode ) | |
| Fabricantes | Vishay | |
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www.vishay.com
VS-80CPU02-F3, VS-80CPU02-N3
Vishay Semiconductors
Ultrafast Rectifier, 2 x 40 A FRED Pt®
Base
common
cathode
2
TO-247AC
13
Anode
1
2
Anode
2
Common
cathode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
trr typ.
TJ max.
Diode variation
TO-247AC
2 x 40 A
200 V
1.02 V
34 ns
175 °C
Common cathode
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to
JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTIONS/APPLICATIONS
VS-80CPU02... series are the state of the art ultrafast
recovery rectifiers designed with optimized performance of
forward voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in the output rectification
stage of welding, SMPS, UPS, DC/DC converters as well as
freewheeling diodes in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Repetitive peak reverse voltage
Average rectified forward current
per leg
total device
VRRM
IF(AV)
Non-repetitive peak surge current per leg
Operating junction and storage temperatures
IFSM
TJ, TStg
TEST CONDITIONS
TC = 145 °C
TJ = 25 °C
MAX.
200
40
80
330
- 65 to 175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Breakdown voltage,
blocking voltage
VBR,
VR
IR = 100 μA
IF = 40 A
Forward voltage
IF = 40 A, TJ = 150 °C
VF
IF = 80 A
IF = 80 A, TJ = 150 °C
Reverse leakage current
VR = VR rated
IR
TJ = 150 °C, VR = VR rated
Junction capacitance
CT VR = 200 V
Series inductance
LS Measured lead to lead 5 mm from package body
MIN.
200
-
-
-
-
-
-
-
-
TYP.
-
0.94
0.80
1.07
0.97
-
-
120
3.5
MAX. UNITS
-
1.02
0.90
1.20
1.08
5
500
-
-
V
μA
pF
nH
Revision: 30-Sep-11
1 Document Number: 93457
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
VS-80CPU02-F3, VS-80CPU02-N3
Vishay Semiconductors
VR = 200 V
L = 70 μH
0.01 Ω
D.U.T.
dIF/dt
adjust
G
D
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
IF
0
(3)
trr
ta
tb
(2) IRRM
(4)
Qrr
0.5 IRRM
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(4) Qrr - area under curve defined by trr
and IRRM
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 9 - Reverse Recovery Waveform and Definitions
Revision: 30-Sep-11
5 Document Number: 93457
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet VS-80CPU02-F3.PDF ] | |
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