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PDF VS-10UT10 Data sheet ( Hoja de datos )
| Número de pieza | VS-10UT10 | |
| Descripción | High Performance Generation 5.0 Schottky Rectifier | |
| Fabricantes | Vishay | |
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VS-10UT10, VS-10WT10FN
Vishay Semiconductors
High Performance Generation 5.0 Schottky Rectifier, 10 A
I-PAK (TO-251AA)
Base
cathode
4
D-PAK (TO-252AA)
Base
cathode
4
13
Anode 2 Anode
Cathode
VS-10UT10
2
1 Cathode 3
Anode
Anode
VS-10WT10FN
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM max.
TJ max.
Diode variation
EAS
I-PAK (TO-251AA),
D-PAK (TO-252AA)
10 A
100 V
0.66 V
4 mA at 125 °C
175 °C
Single die
54 mJ
FEATURES
• 175 °C high performance Schottky diode
• Very low forward voltage drop
• Extremely low reverse leakage
• Optimized VF vs. IR trade off for high efficiency
• Increased ruggedness for reverse avalanche
capability
• RBSOA available
• Negligible switching losses
• Submicron trench technology
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
APPLICATIONS
• High efficiency SMPS
• High frequency switching
• Output rectification
• Reverse battery protection
• Freewheeling
• DC/DC systems
• Increased power density systems
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VRRM
VF
TJ
10 Apk, TJ = 125 °C (typical)
Range
VALUES
100
0.615
- 55 to 175
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
SYMBOL
VR
TEST CONDITIONS
TJ = 25 °C
VS-10UT10
VS-10WT10FN
100
UNITS
V
V
°C
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
IF(AV)
Maximum peak one cycle
non-repetitive surge current
IFSM
Non-repetitive avalanche energy
EAS
Repetitive avalanche current
IAR
Note
(1) Measured connecting 2 anode pins
TEST CONDITIONS
50 % duty cycle at TC = 159 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied (1)
TJ = 25 °C, IAS = 3 A, L = 12 mH
Limited by frequency of operation and time pulse duration
so that TJ < TJ max. IAS at TJ max. as a function of time pulse
(see fig. 8)
VALUES
10
610
110
54
IAS at
TJ max.
UNITS
A
A
mJ
A
Revision: 02-Nov-11
1 Document Number: 94647
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
ORDERING INFORMATION TABLE
VS-10UT10, VS-10WT10FN
Vishay Semiconductors
Device code VS- 10 U T 10 FN TRL
Dimensions
Part marking information
Packaging information
SPICE model
1 2 3 4567
1 - Vishay Semiconductors product
2 - Current rating (10 A)
3 - Package:
U = I-PAK
W = D-PAK
4 - T = Trench
5 - Voltage code (100 V)
6 - TO-252AA (D-PAK)
7 - D-PAK, I-PAK:
None = Tube (75 pieces)
D-PAK only:
TR = Tape and reel
TRL = Tape and reel (left oriented)
TRR = Tape and reel (right oriented)
LINKS TO RELATED DOCUMENTS
I-PAK (TO-251AA)
www.vishay.com/doc?95024
D-PAK (TO-252AA)
www.vishay.com/doc?95448
I-PAK (TO-251AA)
www.vishay.com/doc?95025
D-PAK (TO-252AA)
www.vishay.com/doc?95059
www.vishay.com/doc?95033
www.vishay.com/doc?95026
Revision: 02-Nov-11
5 Document Number: 94647
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet VS-10UT10.PDF ] | |
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