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PDF SDB20100PR Data sheet ( Hoja de datos )
| Número de pieza | SDB20100PR | |
| Descripción | 20 Ampere Dual Common Anode Schottky Half Bridge Rectifier Diode | |
| Fabricantes | Thinki Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SDB20100PR (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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SDB20100PR
®
SDB20100PR
Pb
Pb Free Plating Product
20 Ampere Dual Common Anode Schottky Half Bridge Rectifier Diode
Features
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Inverters and Solar Inverters
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
Mechanical Data
Case: Fully Isolated TO-220FP FullPak Plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.1 gram approxiamtely
ITO-220AB
Unit:mm
Case
Case
Case
Case
Positive
Negative
Doubler
Reverse Doubler
Common Cathode Common Anode Tandem Polarity Tandem Polarity
Suffix "PI"
Suffix "PR"
Suffix "PD"
Suffix "PS"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
PARAMETER
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Average Rectified Output Current
@TC=95°C
Peak Forward Surge Current 8.3ms single half sine-wave
superimposed on rated load
SYMBOL
VRRM
VRMS
VDC
IF
IFSM
SDB20100PR
100
70
100
20
150
Maximum Forward Voltage
Note(1)
IF=10A@
IF=10A@
IF=20A@
IF=20A@
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
VF
0.85
0.75
0.95
0.85
Maximum DC Reverse Current at Rated DC Tj=25°C
Blocking Voltage
Tj=125°C
IR
0.1
50
Typical Junction Capacitance per element (2)
CJ
250
Typical thermal resistance Junction to Case (3)
RΘJC
3.0
Operating junction temperature range
TJ
-55 to +150
Storage temperature range
TSTG
-55 to +150
Note :
(1)
(2)
(3)
300us Pulse Width, 2% Duty Cycle.
Measured at 1.0MHz and applied reverse voltage of 4.0 VDC.
Thermal Resistance Junction to Case, device mounted on L42 x H25 x W25mm_black Aluminum finny heat sink,
UNIT
V
V
V
A
A
V
mA
PF
°C/W
°C
°C
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet SDB20100PR.PDF ] | |
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