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PDF BAV103 Data sheet ( Hoja de datos )

Número de pieza BAV103
Descripción Hermetically Sealed Glass High Voltage Switching Diodes
Fabricantes Taiwan Semiconductor 
Logotipo Taiwan Semiconductor Logotipo



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No Preview Available ! BAV103 Hoja de datos, Descripción, Manual

Small Signal Product
CREAT BY ART
BAV100/101/102/103
Taiwan Semiconductor
Hermetically Sealed Glass High Voltage Switching Diodes
FEATURES
- High voltage switching device
- Ideal for automated placement
- Hermetically sealed glass
- Compression bonded construction
- All external surfaces are corrosion
resistant and leads are readily solderable
- RoHS compliant
MINI MELF
MECHANICAL DATA
- Polarity: Indicated by black cathode band
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power Dissipation
Repetitive Peak Reverse Voltage
Average Rectified Forward Current
Non-Repetitive Peak Forward
Surge Current
Pulse Width = 1.0 s
Pulse Width = 1.0 μs
PD
VRRM
IF(AV)
IFSM
500
250
200
1.0
4.0
Operating and Storage Temperature Range
TJ , TSTG
-65 to +200
Electrical Characteristics
PARAMETER
SYMBOL
Breakdown Voltage
Forward Voltage
Peak Reverse Current
BAV100 IR = 100 μA
BAV101 IR = 100 μA
BAV102 IR = 100 μA
BAV103 IR = 100 μA
IF = 100 mA
BAV100 VR = 50 V
BAV101 VR = 100 V
BAV102 VR = 150 V
BAV103 VR = 200 V
BV
VF
IR
Thermal Resistance, Junction to Ambient
RθJA
Junction Capacitance
VR = 0 , f = 1.0 MHz
CJ
Reverse Recovery Time
(Note)
trr
Notes : Reverse recovery test conditions : IF = IR = 30 mA , Irr = 30 mA , RL = 100
MIN
MAX
60
120
200
-
250
- 1.0
100
- 100
100
100
350
- 5.0
- 50
UNIT
mW
V
mA
A
oC
UNIT
V
V
nA
oC/W
pF
ns
Document Number: DS_S1501002
Version: B15

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