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PDF BAT42 Data sheet ( Hoja de datos )
| Número de pieza | BAT42 | |
| Descripción | SILICON PLANAR SCHOTTKY DIODES | |
| Fabricantes | CDIL | |
| Logotipo |  |
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR SCHOTTKY DIODES
BAT42
BAT43
DO- 35
Glass Axial Package
General Purpose Metal to Silicon Diodes Featuring Very Low Turn-on Voltage and Fast Switching
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Repetitive Peak Reverse Voltage
Forward Current (DC)
Repetitive Peak Forward Current tp <1s
δ <0.5
Surge Non Repetitive Forward Current
tp<10ms
Power Dissipation Ta=65ºC
Storage Temperature Range
Junction Temperature
Maximum Lead Temperature for
Soldering during 10s at 4mm from case
SYMBOL
VRRM
*IF
*IFRM
*IFSM
PD
Tstg
Tj
TL
THERMAL RESISTANCE
Junction to Ambient in free air
*Rth (j-a)
*On infinite heat sink with 4mm lead length
VALUE
30
200
500
4.0
200
- 65 to +150
- 65 to +125
230
300
ELECTRICAL CHARACTERISTICS (Tj=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Reverse Breakdown Voltage
V(BR)R
IR=100µA
Forward Voltage
**VF IF=200mA All Types
IF=10mA BAT42
IF=50mA BAT42
IF=2mA
BAT43
IF=15mA
BAT43
Reverse Current
**IR VR=25V Tj=25ºC
VR=25V Tj=100ºC
DYNAMIC CHARACTERISTICS
DESCRIPTION
Diode Capacitance
SYMBOL
Cd
Reverse Recovery Time When Switched
From
trr
Detection Efficiency
πv
TEST CONDITION
VR=1V, f=1MHz
IF=10mA to IR=10mA,
measured at IRR=1mA,
RL=100Ω
RL=15KΩ , CL=300pF,
f=45MHz, VI=2V
MIN MAX
30
1.0
0.40
0.65
0.26 0.33
0.45
0.5
100
MIN MAX
TYP 7.0
5
80
Pulse test: tp=300µs δ <2%
BAT42_43Rev300105E
UNIT
V
mA
mA
A
mW
oC
oC
oC
oC/W
UNIT
V
V
V
V
V
V
µA
µA
UNIT
pF
ns
%
Continental Device India Limited
Data Sheet
Page 1 of 3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet BAT42.PDF ] | |
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