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PDF BAS316WS Data sheet ( Hoja de datos )

Número de pieza BAS316WS
Descripción 200mW High-Speed Switching SMD Diode
Fabricantes Taiwan Semiconductor 
Logotipo Taiwan Semiconductor Logotipo



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No Preview Available ! BAS316WS Hoja de datos, Descripción, Manual

Small Signal Product
BAS316WS
Taiwan Semiconductor
200mW High-Speed Switching SMD Diode
FEATURES
- Fast switching device (trr<4.0ns)
- Surface mount device type
- Moisture sensitivity level 1
- Matte Tin (Sn) lead finish
- Pb free version and RoHS compliant
- Packing code with suffix "G" means
green compound (halogen-free)
MECHANICAL DATA
- Case: Flat lead SOD-323F small outline plastic package
- Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed : 260°C/10s
- Polarity: Indicated by cathode band
- Weight: 4.6 ± 0.5 mg
- Marking Code: W2
SOD-323F
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power Dissipation
Average Forward Current
Non-Repetitive Peak Forward Surge Current Pulse Width = 1 μs
Pulse Width = 1 ms
PD
IO
IFRM
200
250
4.0
1.0
Operating Junction Temperature
TJ 150
Storage Temperature Range
TSTG
-65 to + 150
PARAMETER
Reverse Breakdown Voltage
Forward Voltage
Reverse Leakage Voltage
Junction Capacitance
Reverse Recovery Time
IR = 100 μA
IF = 1.0 mA
IF = 10 mA
IF = 50 mA
IF = 150 mA
VR = 75 V
VR = 25 V
VR = 0 , f = 1.0 MHz
IF = IR = 10 mA , Irr = 0.1 × IR
SYMBOL
V(BR)
VF
IR
CJ
trr
MIN
100
-
-
-
-
-
-
-
MAX
-
0.715
0.855
1.000
1.250
1
0.03
1.5
4.0
UNIT
mW
mA
A
oC
oC
UNIT
V
V
μA
pF
ns
Document Number: DS_S1501001
Version: B15

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