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Número de pieza | BAS19 | |
Descripción | SILICON PLANAR HIGH SPEED DIODES | |
Fabricantes | CDIL | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BAS19 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR HIGH SPEED DIODES
3
Pin Configuration
1 = ANODE
2 = NC
3 = CATHODE
12
BAS19, BAS20, BAS21
SOT-23
Formed SMD Package
Marking
BAS19 = A8
BAS20 = A81
BAS21 = A82
High-Speed Switching Diodes in a Microminiature Plastic Envelope.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)
DESCRIPTION
SYMBOL
Continuous Reverse Voltage
VR
Repetitive Peak Reverse Voltage
VRRM
Non Repetitive Peak Forward Current
t=1µs
t=1s
IFSM
IFSM
Average Rectified Forward Current
(averaged over any 20 ms period)
IF (AV)
Forward Current (DC)
Repetitive Peak Forward Current
Total Power Dissipation
*IF
IFRM
PD
Storage Temperature Range
Junction Temperature
Tstg
Tj
BAS19
100
120
BAS20
150
200
2.5
0.5
200
200
625
250
- 55 to +150
150
BAS21
200
250
UNIT
V
V
A
A
mA
mA
mA
mW
oC
oC
Thermal Resistance
Junction to Ambient in free air
Rth (j-a)
500
K/W
ELECTRICAL CHARACTERISTICS
DESCRIPTION
Forward Voltage
Reverse Breakdown Voltage
(Ta=25º C unless specified otherwise)
SYMBOL TEST CONDITION
VF
V(BR)R
IF=100mA
IF=200mA
IR=100µA
**BAS19
BAS20
***BAS21
MIN TYP MAX
1.00
1.25
120
200
250
UNIT
V
V
V
V
V
*Mounted on a ceramic substrate 0f 8mm x 10mm x 0.7mm
**Measured under pulse conditions; pulse time = tp=0.3ms.
***At zero life time measured under pulse conditions to avoid excessive dissipation and voltage limited to 275V
BAS19_21 Rev_1 050503E
Continental Device India Limited
Data Sheet
Page 1 of 4
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet BAS19.PDF ] |
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