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PDF BAS116 Data sheet ( Hoja de datos )
| Número de pieza | BAS116 | |
| Descripción | SMD Switching Diode | |
| Fabricantes | Taiwan Semiconductor | |
| Logotipo |  |
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Small Signal Product
BAS116
Taiwan Semiconductor
225mW, SMD Switching Diode
FEATURES
- Low power loss, high current capability, low VF
- Surface device type mounting
- Moisture sensitivity level 1
- Matte Tin (Sn) lead finish with
Nickel (Ni) under plate
- Pb free version and RoHS compliant
- Packing code with suffix "G" means
green compound (halogen-free)
SOT-23
MECHANICAL DATA
- Case: SOT- 23, molded plastic
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260°C/10s
- Weight: 8 mg (approximately)
- Marking Code: JV
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power Dissipation
PD 225
Repetitive Peak Reverse Voltage
Mean Forward Current
VRRM
IO
75
200
Non-Repetitive Peak Forward Surge Current @ t = 1.0 s
IFSM
500
Thermal Resistance (Junction to Ambient) (Note 1)
Junction and Storage Temperature Range
RθJA
TJ , TSTG
330
-55 to +150
PARAMETER
SYMBOL
Reverse Breakdown Voltage
IR = 100 μA
IF = 1 mA
VBR
Forward Voltage
IF = 10 mA
IF = 50 mA
VF
IF = 150 mA
Reverse Leakage Current
VR = 75 V
TJ=25°C
TJ=150°C
IR
Junction Capacitance
VR = 0 V , f = 1.0 MHz
CJ
Reverse Recovery Time
(Note 2)
trr
Notes : 1. Valid provided that electrodes are kept at ambient temperature
2. Reverse recovery test conditions : IF=10mA , IR=10mA , RL=100 Ω, IRR= 1mA
MIN
75
-
-
-
-
-
-
-
MAX
-
0.9
1.0
1.1
1.25
5
80
2.0
3.0
UNIT
mW
V
mA
mA
°C/W
°C
UNIT
V
V
nA
pF
ns
Document Number: DS_S1412037
Version: D15
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet BAS116.PDF ] | |
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