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PDF 1N6263W Data sheet ( Hoja de datos )
| Número de pieza | 1N6263W | |
| Descripción | Surface Mount Schottky Barrier Diode | |
| Fabricantes | Taiwan Semiconductor | |
| Logotipo |  |
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1N6263W
Surface Mount Schottky Barrier Diode
Features
Low forward voltage drop
Guard Ring Construction for Transient
Protection
Fast switching time
Low Reverse Capacitance
Surface mount package ideally suited for
automatic insertion
Mechanical Data
Voltage Range
60 Volts
400m Watts Power Dissipation
SOD-123
0.053(1.35)
Max.
0.022(0.55)
Typ. Min.
0.152(3.85)
0.140(3.55)
0.010(0.25)
Min.
0.112(2.85)
0.100(2.55)
Case: SOD-123, Plastic
Terminals: Solderable per MIIL-STD-202,
Method 208
Polarity: Cathode Band
Marking: Date Code and Type Code
Type Code: SB
Weight: 0.01 grams (approx.)
0.006(0.15)
Typ. Min.
0.067(1.70)
0.55(1.40)
0.004(0.10)
Max.
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Non-Repetitive Peak Forward Surge Current
@ t ≦1.0s
@ t = 10mS
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 1)
Symbol
VRRM
VRWM
VR
VR(RMS)
IF
IFSM
Pd
RθJA
1N6263W
60
42
15
50
2.0
400
375
Operating and Storage Temperature Range
Electrical Characteristics
Type Number
Reverse Breakdown Voltage (Note 3) IR=10uA
Reverse Leakage Current
VR=50V
TJ, TSTG
Symbol
V(BR)
IR
-65 to + 175
Min Typ
60 _
__
Forward Voltage Drop
IF=1.0mA
IF=15mA
Junction Capacitance VR=0, f=1.0MHz
Reverse Recovery Time (Note 2)
VF
Cj
trr
__
_ 2.0
_ 1.0
Notes: 1. Valid Provided that Terminals are Kept at Ambient Temperature.
2. Reverse Recovery Test Conditions: IF=IR=5.0mA, Irr=0.1 x IR, RL=100Ω.
3. Test Period < 3000uS.
- 32 -
Max
_
200
0.41
1.0
_
_
Units
V
V
mA
mA
A
mW
K/W
OC
Units
V
nA
V
pF
nS
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 1N6263W.PDF ] | |
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