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PDF GBU8D Data sheet ( Hoja de datos )

Número de pieza GBU8D
Descripción Silicon Bridge Rectifier
Fabricantes GeneSiC 
Logotipo GeneSiC Logotipo



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No Preview Available ! GBU8D Hoja de datos, Descripción, Manual

GBU8A thru GBU8G
Single Phase Glass Passivated
Silicon Bridge Rectifier
VRRM = 50 V - 400 V
IO = 8 A
Features
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• High case dielectric strength of 1500 VRMS
• Glass passivated chip junction
• Ideal for printed circuit boards
• High surge overload rating
• High temperature soldering guaranteed: 260C/ 10
seconds, 0.375 (9.5mm) lead length
• Not ESD Sensitive
Mechanical Data
Case: Molded plastic body over passivated junctions
Terminals: Plated leads, solderable per MIL-STD-750 Method 2026.
Mounting position: Any
Maximum ratings at Tc = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
VRRM
VRMS
VDC
Tj
Tstg
GBU8A
50
35
50
-55 to 150
-55 to 150
GBU Package
GBU8B
100
70
100
-55 to 150
-55 to 150
GBU8D
200
140
200
-55 to 150
-55 to 150
GBU8G
400
280
400
-55 to 150
-55 to 150
Unit
V
V
V
°C
°C
Electrical characteristics at Tc = 25 °C, unless otherwise specified
Single phase, half sine wave, 60 Hz, resistive or inductive load
For capacitive load derate current by 20%
Parameter
Symbol
Conditions
GBU8A
Maximum average forward rectified
current 1,2
Peak forward surge current
Maximum instantaneous forward
voltage drop per leg
Maximum DC reverse current at
rated DC blocking voltage per leg
Rating for fusing
Typical junction capacitance per
leg 3
Typical thermal resistance per leg 1,2
IO
IFSM
VF
IR
I2t
Cj
RΘJA
RΘJL
Tc = 100 °C
tp = 8.3 ms, half sine
IF = 8 A
Ta = 25 °C
Ta = 125 °C
t < 8.3 ms
8.0
200
1.1
5
500
166
211
21
2.2
1 - Device mounted on 82 mm x 82 mm x 3 mm Al plate heatsink
2 - Recommended mounted position is to bolt down device on a heatsink with silicon
thermal compond for maximum heat transfer using #6 screw.
3 - Measured at 1.0 MHz and applied reverse bias of 4.0 V
GBU8B
8.0
200
1.1
5
500
166
211
21
2.2
GBU8D
8.0
200
1.1
5
500
166
211
21
2.2
GBU8G
8.0
200
1.1
5
500
166
211
21
2.2
Unit
A
A
V
μA
A2sec
pF
°C/W
www.genesicsemi.com/silicon-products/bridge-rectifiers/
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