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PDF 2SC5658-R Data sheet ( Hoja de datos )

Número de pieza 2SC5658-R
Descripción NPN Transistor
Fabricantes Taiwan Semiconductor 
Logotipo Taiwan Semiconductor Logotipo



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No Preview Available ! 2SC5658-R Hoja de datos, Descripción, Manual

CREAT BY ART
Small Signal Product
2SC5658-Q/R/S
NPN Transistor
SOT-723
Features
Epitaxial planar die construction
Surface device type mounting
Moisture sensitivity level 1
Low Cob
Pb free version and RoHS compliant
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
Complements the 2SA2029
Mechanical Data
Case : SOT-723 small outline plastic package
per MIL-STD-202, Method 208 guaranteed
High temperature soldering guaranteed: 260/10s
1. BASE
2. EMITTER
3. COLLECTOR
Ordering Information (example)
Part No.
2SC5658-Q
Package Packing
SOT-723 8K / 7" Reel
Packing
code
RM
Packing code
(Green)
RMG
Marking
BQ
Maximum Ratings and Electrical Characteristics
Rating at 25 ambient temperature unless otherwise specified.
Parameter
Symbol
Collector Base Voltage
VCBO
Collector Emitter Voltage
VCEO
Emitter Base Voltage
Collector Current
VEBO
IC
Collector Dissipation
PC
Junction Temperature
TJ
Storage Temperature Range
TSTG
Characteristics at TA=25
Parameter
Collector Base Breakdown Voltage at IC=50uA, IE=0
Collector Emitter Breakdown Voltage at IC=1mA, IB=0
Emitter Base Breakdown Voltage at IE=50uA, IC=0
Collector Cutoff Current
at VCB=60V, IE=0
Emitter Cutoff Current
at VEB=7V, IC=0
DC Current Transfer ratio
at VCE=6V, IC=1mA
Collector Emitter Saturation Voltage at IC=50mA, IB=5mA
Transition Frequency at VCE=12V, IC=2mA, f=100MHz
Output Capacitance
at VCB=12V, f=1MHz
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
Min.
60
50
7
-
-
120
-
-
-
Classification of hFE
Rank
Range
Q
120~270
R
180~390
Limits
60
50
7
150
100
150
- 55 to + 150
Units
V
V
V
mA
mW
OC
OC
Typ.
-
-
-
-
-
-
-
180
-
Max.
-
-
-
0.1
0.1
560
0.4
-
3.5
Units
V
V
V
uA
uA
V
MHz
pF
S
270~560
VersionA13

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