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PDF W632GU6KB Data sheet ( Hoja de datos )

Número de pieza W632GU6KB
Descripción 16M x 8-BANKS x 16-BIT DDR3L SDRAM
Fabricantes Winbond 
Logotipo Winbond Logotipo



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W632GU6KB
16M 8 BANKS 16 BIT DDR3L SDRAM
Table of Contents-
1. GENERAL DESCRIPTION ...................................................................................................................5
2. FEATURES ...........................................................................................................................................5
3. ORDER INFORMATION .......................................................................................................................6
4. KEY PARAMETERS .............................................................................................................................7
5. BALL CONFIGURATION ......................................................................................................................8
6. BALL DESCRIPTION............................................................................................................................9
7. BLOCK DIAGRAM ..............................................................................................................................11
8. FUNCTIONAL DESCRIPTION............................................................................................................12
8.1 Basic Functionality ..............................................................................................................................12
8.2 RESET and Initialization Procedure ....................................................................................................12
8.2.1
Power-up Initialization Sequence .....................................................................................12
8.2.2
Reset Initialization with Stable Power ..............................................................................14
8.3 Programming the Mode Registers.......................................................................................................15
8.3.1
Mode Register MR0 .........................................................................................................17
8.3.1.1
Burst Length, Type and Order ................................................................................18
8.3.1.2
CAS Latency...........................................................................................................18
8.3.1.3
Test Mode...............................................................................................................19
8.3.1.4
DLL Reset...............................................................................................................19
8.3.1.5
Write Recovery .......................................................................................................19
8.3.1.6
Precharge PD DLL .................................................................................................19
8.3.2
Mode Register MR1 .........................................................................................................20
8.3.2.1
DLL Enable/Disable................................................................................................20
8.3.2.2
Output Driver Impedance Control ...........................................................................21
8.3.2.3
ODT RTT Values ....................................................................................................21
8.3.2.4
Additive Latency (AL) .............................................................................................21
8.3.2.5
Write leveling ..........................................................................................................21
8.3.2.6
Output Disable........................................................................................................21
8.3.3
Mode Register MR2 .........................................................................................................22
8.3.3.1
Partial Array Self Refresh (PASR) ..........................................................................23
8.3.3.2
CAS Write Latency (CWL) ......................................................................................23
8.3.3.3
Auto Self Refresh (ASR) and Self Refresh Temperature (SRT) .............................23
8.3.3.4
Dynamic ODT (Rtt_WR) .........................................................................................23
8.3.4
Mode Register MR3 .........................................................................................................24
8.3.4.1
Multi Purpose Register (MPR) ................................................................................24
8.4 No OPeration (NOP) Command..........................................................................................................25
8.5 Deselect Command.............................................................................................................................25
8.6 DLL-off Mode ......................................................................................................................................25
8.7 DLL on/off switching procedure...........................................................................................................26
8.7.1
DLL onto DLL offProcedure ..........................................................................26
8.7.2
DLL offto DLL onProcedure ..........................................................................27
8.8 Input clock frequency change..............................................................................................................28
8.8.1
Frequency change during Self-Refresh............................................................................28
8.8.2
Frequency change during Precharge Power-down ..........................................................28
8.9 Write Leveling .....................................................................................................................................30
Publication Release Date: Jan. 20, 2015
Revision: A06
-1-

1 page




W632GU6KB pdf
W632GU6KB
1. GENERAL DESCRIPTION
The W632GU6KB is a 2G bits DDR3L SDRAM, organized as 16,777,216 words 8 banks 16 bits.
This device achieves high speed transfer rates up to 1866 Mb/sec/pin (DDR3L-1866) for various
applications. The W632GU6KB is sorted into the following speed grades: -11, -12, 12I, -15 and 15I.
The -11 speed grade is compliant to the DDR3L-1866 (13-13-13) specification. The -12 and 12I speed
grades are compliant to the DDR3L-1600 (11-11-11) specification (the 12I industrial grade which is
guaranteed to support -40°C ≤ TCASE 95°C). The -15 and 15I speed grades are compliant to the
DDR3L-1333 (9-9-9) specification (the 15I industrial grade which is guaranteed to support -40°C
TCASE 95°C).
The W632GU6KB is designed to comply with the following key DDR3L SDRAM features such as
posted CAS#, programmable CAS# Write Latency (CWL), ZQ calibration, on die termination and
asynchronous reset. All of the control and address inputs are synchronized with a pair of externally
supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and
CK# falling). All I/Os are synchronized with a differential DQS-DQS# pair in a source synchronous
fashion.
2. FEATURES
Power Supply: 1.35V (typ.), VDD, VDDQ = 1.283V to 1.45V
Backward compatible to VDD, VDDQ = 1.5V ± 0.075V
Double Data Rate architecture: two data transfers per clock cycle
Eight internal banks for concurrent operation
8 bit prefetch architecture
CAS Latency: 6, 7, 8, 9, 10, 11 and 13
Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable On-
The-Fly (OTF)
Programmable read burst ordering: interleaved or nibble sequential
Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received with data
Edge-aligned with read data and center-aligned with write data
DLL aligns DQ and DQS transitions with clock
Differential clock inputs (CK and CK#)
Commands entered on each positive CK edge, data and data mask are referenced to both edges of
a differential data strobe pair (double data rate)
Posted CAS with programmable additive latency (AL = 0, CL - 1 and CL - 2) for improved command,
address and data bus efficiency
Read Latency = Additive Latency plus CAS Latency (RL = AL + CL)
Auto-precharge operation for read and write bursts
Refresh, Self-Refresh, Auto Self-refresh (ASR) and Partial array self refresh (PASR)
Precharged Power Down and Active Power Down
Data masks (DM) for write data
Programmable CAS Write Latency (CWL) per operating frequency
Write Latency WL = AL + CWL
Multi purpose register (MPR) for readout a predefined system timing calibration bit sequence
Publication Release Date: Jan. 20, 2015
Revision: A06
-5-

5 Page





W632GU6KB arduino
7. BLOCK DIAGRAM
CK, CK#
CKE
CLOCK
BUFFER
CS#
RAS#
CAS#
WE#
COMMAND
DECODER
CONTROL
SIGNAL
GENERATOR
A10
A0
A9
A11
A12
A13
BA2
BA1
BA0
ADDRESS
BUFFER
MODE
REGISTER
REFRESH
COUNTER
COLUMN
COUNTER
ZQCL, ZQCS
ZQ ZQ CAL
RZQ
VSSQ
To ODT/output drivers
COLUMN
DECODER
CELL ARRAY
BANK #0
SENSE
AMPLIFIER
COLUMN
DECODER
CELL ARRAY
BANK #1
SENSE
AMPLIFIER
COLUMN
DECODER
CELL ARRAY
BANK #4
PREFETCH REGISTER
DATA CONTROL CIRCUIT
DM MASK LOGIC
COLUMN
DECODER
CELL ARRAY
BANK #2
SENSE
AMPLIFIER
COLUMN
DECODER
CELL ARRAY
BANK #3
SENSE
AMPLIFIER
COLUMN
DECODER
CELL ARRAY
BANK #6
SENSE
AMPLIFIER
NOTE: The cell array configuration is 16384 * 1024 * 16
- 11 -
W632GU6KB
COLUMN
DECODER
CELL ARRAY
BANK #5
DLL
DQ
BUFFER
READ
drivers
WRITE
drivers
CK, CK#
ODT
DQL0DQL7
DQU0DQU7
LDQS, LDQS#
LDQS, LDQS#
DQL0DQL7
DQU0DQU7
ODT
LDQS, LDQS#
CONTROL UDQS, UDQS#
LDM, UDM
LDM, UDM
COLUMN
DECODER
CELL ARRAY
BANK #7
SENSE
AMPLIFIER
Publication Release Date: Jan. 20, 2015
Revision: A06

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