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PDF VS-ST110S12 Data sheet ( Hoja de datos )

Número de pieza VS-ST110S12
Descripción Phase Control Thyristors
Fabricantes Vishay 
Logotipo Vishay Logotipo



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No Preview Available ! VS-ST110S12 Hoja de datos, Descripción, Manual

www.vishay.com
VS-ST110SPbF Series
Vishay Semiconductors
Phase Control Thyristors
(Stud Version), 110 A
TO-209AC (TO-94)
PRODUCT SUMMARY
IT(AV)
VDRM/VRRM
VTM
IGT
TJ
Package
Diode variation
110 A
400 V, 1600 V
1.52 V
150 mA
-40 °C to 140 °C
TO-209AC (TO-94)
Single SCR
FEATURES
• Center gate
• International standard case TO-209AC (TO-94)
• Compression bonded encapsulation for heavy
duty operations such as severe thermal cycling
• Hermetic glass-metal case with ceramic insulator
(Glass-metal seal over 1200 V)
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
IT(RMS)
ITSM
I2t
VDRM/VRRM
tq
TJ
TC
50 Hz
60 Hz
50 Hz
60 Hz
Typical
VALUES
110
90
175
2700
2830
36.4
33.2
400 to 1600
100
-40 to 125
UNITS
A
°C
A
kA2s
V
μs
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VOLTAGE
TYPE NUMBER
CODE
VS-ST110S
04
08
12
16
VDRM/VRRM, MAXIMUM REPETITIVE VRSM, MAXIMUM NON-REPETITIVE IDRM/IRRM MAXIMUM AT
PEAK AND OFF-STATE VOLTAGE
PEAK VOLTAGE
TJ = TJ MAXIMUM
V V mA
400 500
800
1200
900
1300
20
1600
1700
Revision: 11-Mar-14
1 Document Number: 94393
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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VS-ST110S12 pdf
www.vishay.com
2400
2200
2000
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial TJ = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
1800
1600
1400
1200
ST110S Series
1000
1
10 100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
10000
VS-ST110SPbF Series
Vishay Semiconductors
2800
Maximum Non Repetitive Surge Current
2600
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
2400
Initial TJ = 125°C
2200
No Voltage Reapplied
Rated VRRM Reapplied
2000
1800
1600
1400
1200 ST110S Series
1000
0.01
0.1 1
Pulse Train Duration (s)
10
Fig. 6 - Maximum Non-Repetitive Surge Current
1000
100 Tj = 25˚C
Tj = 125˚C
ST110S Series
10
0.5 1.5 2.5 3.5 4.5
Instantaneous On-state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
1
Steady State Value
R thJC = 0.195 K/W
(DC Operation)
0.1
0.01
0.001
0.001
ST110S Series
0.01
0.1
Square Wave Pulse Duration (s)
1
Fig. 8 - Thermal Impedance ZthJC Characteristic
10
Revision: 11-Mar-14
5 Document Number: 94393
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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