|
|
PDF CGHV22200 Data sheet ( Hoja de datos )
| Número de pieza | CGHV22200 | |
| Descripción | GaN HEMT | |
| Fabricantes | Cree | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de CGHV22200 (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
|
No Preview Available !
CGHV22200
200 W, 1800-2200 MHz, GaN HEMT for LTE
Cree’s CGHV22200 is a gallium nitride (GaN) high electron mobility transistor (HEMT)
is designed specifically for high efficiency, high gain and wide bandwidth capabilities,
which makes the CGHV22200F ideal for 1.8 - 2.2 GHz LTE, 4G Telecom and BWA
amplifier applications. The transistor is input matched and supplied in a ceramic/
metal flange package.
PNPa: CckGaHgVe2T2y2p0e0: F44a0n1d6C2GaHndV2424200106P1
Typical Performance Over 1.8 - 2.2 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
1.8 GHz
2.0 GHz
2.2 GHz
Gain @ 47 dBm
16.6
19.2
18.1
ACLR @ 47 dBm
-37.4
-37.4
-35.6
Drain Efficiency @ 47 dBm
31.5
31.9
34.8
Note:
Measured in the CGHV22200-AMP amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 45% clipping,
PAR = 7.5 dB @ 0.01% Probability on CCDF. IDS = 1.0 A
Units
dB
dBc
%
Features
• 1.8 - 2.2 GHz Operation
• 18 dB Gain
• -35 dBc ACLR at 50 W PAVE
• 31-35 % Efficiency at 50 W PAVE
• High Degree of DPD Correction Can be Applied
Subject to change without notice.
www.cree.com/rf
1
1 page  
Typical Performance
Figure C5.G-HCVG2V2H2dV0d02=F520S2,p0Ied0cqSt=rp1aleAMc,taFrsareklqMa=t2aP.s1ak4veGa=tHPz4A,7V1EdCB=mW47CwDditMhBmAan7dw.5witPhitAhaRonudt DwPitDhout DPD
VDD=50, IDQ=1.0 A, Freq=2.14 GHz, 1 C WCDMA 7.5 PAR
0
-10
-20
-30
Uncorrected
-40 Corrected
-50
-60
-70
-80
2.125 2.13 2.135 2.14 2.145 2.15
Frequency (GHz)
Figure 6. - CGHTVy2p2ic2a0l 0LiTnyerpiitcyaulnLdinereaDrPitDy vusn.dOeurtDpuPtDPvosw.eOrutput Power
VDD=50, ID5Q0=V1,.01.0AA, ,F2re.1q4=G2H.1z4, 1GcHhzW, 1CDCMWAC7D.5MPAAR7.5 PAR
35
Gain_UNCORR
30 Gain_CORR
EFF_UNCORR
EFF_CORR
25 ACP_UNCORR
ACP_CORR
Efficiency
20
Gain
15
2.155
5
-5
-15
-25
-35
ACP Uncorrected
10 -45
ACP Corrected
5 -55
0 -65
26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48
Average Output Power (dBm)
Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
5 CGHV22200 Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
5 Page 
Part Number System
CGHV22200F
Package
Power Output (W)
Upper Frequency (GHz)
Cree GaN High Voltage
Parameter
Value
Units
Upper Frequency1
Power Output
Package
2.2
200
Flange
GHz
W
-
Table 1.
Note1: Alpha characters used in frequency code
indicate a value greater than 9.9 GHz. See Table
2 for value.
Character Code
Code Value
A
B
C
D
E
F
G
H
J
K
Examples:
0
1
2
3
4
5
6
7
8
9
1A = 10.0 GHz
2H = 27.0 GHz
Table 2.
Copyright © 2012-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
11 CGHV22200 Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet CGHV22200.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| CGHV22200 | GaN HEMT | Cree |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |