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PDF CGH55015P1 Data sheet ( Hoja de datos )

Número de pieza CGH55015P1
Descripción GaN HEMT
Fabricantes Cree 
Logotipo Cree Logotipo



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No Preview Available ! CGH55015P1 Hoja de datos, Descripción, Manual

CGH55015F1 / CGH55015P1
15 W, 5500-5800 MHz, GaN HEMT for WiMAX
Cree’s CGH55015F1/CGH55015P1 is a gallium nitride (GaN) high electron mobility
transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth
capabilities, which makes the CGH55015F1/CGH55015P1 ideal for 5.5-5.8 GHz WiMAX
and linear amplifier applications. The transistor is available in both screw-down, flange
and solder-down, pill packages. Based on appropriate external match adjustment, the
CGH55015F1/CGH55015P1 is suitable for 4.9 - 5.5 GHz applications as well.
PPNa:cCkGagHe5T5y0p1e5:P4140&1C9G6H&554041051F616
Typical Performance 5.5-5.8GHz (TC = 25˚C)
Parameter
5.50 GHz
Small Signal Gain
10.7
5.65 GHz
11.0
5.80 GHz
10.7
EVM at PAVE = 23 dBm
1.9 1.8 2.0
EVM at PAVE = 33 dBm
1.5 1.5 1.7
Drain Efficiency at PAVE = 33 dBm
25
25
25
Input Return Loss
11.5
14.5
10.5
Note:
Measured in the CGH55015-AMP amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix,
64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3,
PAR = 9.8 dB @ 0.01 % Probability on CCDF.
Units
dB
%
%
%
dB
Features
• 5.5 - 5.8 GHz Operation
• 15 W Peak Power Capability
• >10.5 dB Small Signal Gain
• 2 W PAVE < 2.0 % EVM
• 25 % Efficiency at 2 W Average Power
• Designed for WiMAX Fixed Access 802.16-2004 OFDM Applications
• Designed for Multi-carrier DOCSIS Applications
Subject to change without notice.
www.cree.com/wireless
1

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CGH55015P1 pdf
Typical DOCSIS Performance
DOCSIS Modulation Error Ratio vs Output Power of CGH55015
40
5.50 GHz
39 5.65 GHz
5.80 GHz
38
37
36
35
34
33
15 20 25 30 35 40
Power Output (dBm)
Note:
MER is the metric of choice for cable systems and can be related to EVM by the following equation: EVM(%) =
100 x 10 ^ -((MERdB + MTAdB)/20). MTA is the “maximum-to-average constellation power ratio” which varies
with the modulation type: MTA = 0 for BPSK and QPSK; 2.55 for 16QAM and 8QAM-DS; 3.68 for 64QAM and
32QAM-DS; 4.23 for 256QAM and 128QAM-DS
DOCSIS EVM vs Output Power of CGH55015 in Broadband Amplifier Circuit
1.6
1.4
1.2
1.0
0.8
5.50 GHz
0.6 5.65 GHz
5.80 GHz
0.4
0.2
0.0
15 20 25 30 35
Power Output (dBm)
Note:
Under DOCSIS, 6.0 MHz Channel BW, 64 QAM, PN23, Filter Alpha 0.18, PAR = 6.7dB.
40
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
5 CGH55015F1_P1 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf

5 Page





CGH55015P1 arduino
Product Dimensions CGH55015F1 (Package Type —­ 440166)
Product Dimensions CGH55015P1 (Package Type ­— 440196)
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
11 CGH55015F1_P1 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf

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