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PDF CGH35240F Data sheet ( Hoja de datos )
| Número de pieza | CGH35240F | |
| Descripción | GaN HEMT | |
| Fabricantes | Cree | |
| Logotipo |  |
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CGH35240F
240 W, 3100-3500 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems
Cree’s CGH35240F is a gallium nitride (GaN) high electron mobility transistor (HEMT)
designed specifically with high efficiency, high gain and wide bandwidth capabilities,
which makes the CGH35240F ideal for 3.1-3.5GHz S-Band radar amplifier applications.
The transistor is supplied in a ceramic/metal flange package.
PackaPgeN:TCypGeH: 3454204200F1
Typical Performance Over 3.1-3.5GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
3.1 GHz
3.2 GHz
3.3 GHz
3.4 GHz
Output Power
250 240 225 225
3.5 GHz
220
Gain
12.1
11.9
11.6
11.5
11.4
Power Added Efficiency
60
59
57
52
Note:
Measured in the CGH35240F-AMP amplifier circuit, under 300 μs pulse width, 20% duty cycle, PIN = 42 dBm.
48
Units
W
dB
%
Features
• 3.1 - 3.5 GHz Operation
• 240 W Typical Output Power
• 11.6 dB Power Gain at PIN = 42.0 dBm
• 57 % Typical Power Added Efficiency
• 50 Ohm Internally Matched
• <0.2 dB Pulsed Amplitude Droop
Subject to change without notice.
www.cree.com/wireless
1
1 page  
Typical Performance
Typical Pulsed Output Power and Power Added Efficiency vs Frequency
Measured in CGH35240-AMP Amplifier Circuit.
VDS = 28 V, IDS = 1 A, PIN = 42 dBm, Pulse Width = 300 μS, Duty Cycle = 20%
55.0
100
Pout (dBm)
54.5
90
PAE (%)
54.0
80
53.5
70
53.0
60
52.5
50
52.0
40
51.5
3000
3100
Typical Pulse Droop Performance
3200
3300
Frequency (MHz)
3400
3500
CGH35240F Pulsed Power Performance
54.0
300 us 5 %
300 us 10 %
300 us 20 %
300 us 25 %
53.9
1 ms 5 %
1 ms 10 %
1 ms 20 %
1 ms 25 %
5 ms 5 %
5 ms 10 %
5 ms 20 %
5 ms 25 %
53.8
53.7
Pulse Width
53.6 10 us
53.5 50 us
100 us
53.4
300 us
53.3 1 ms
5 ms
53.2
53.1
53.0
-1 0 1 2 3 4 5 6
Time (ms)
Electrostatic Discharge (ESD) Classifications
30
3600
Duty Cycle (%)
5-25
5-25
5-25
5-25
5-25
5-25
Droop (dB)
0.05
0.05
0.10
0.15
0.30
0.60
Parameter
Human Body Model
Charge Device Model
Symbol
HBM
CDM
Class
1A (> 250 V)
II (200 < 500 V)
Test Methodology
JEDEC JESD22 A114-D
JEDEC JESD22 C101-C
Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
5 CGH35240F Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
5 Page 
Product Ordering Information
Order Number
Description
CGH35240F
GaN HEMT
Unit of Measure
Each
Image
CGH35240F-TB
Test board without GaN HEMT
Each
CGH35240F-AMP
Test board with GaN HEMT installed
Each
Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
11 CGH35240F Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet CGH35240F.PDF ] | |
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