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PDF CGH35015 Data sheet ( Hoja de datos )
| Número de pieza | CGH35015 | |
| Descripción | GaN HEMT | |
| Fabricantes | Cree | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de CGH35015 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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CGH35015
15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX
Cree’s CGH35015 is a gallium nitride (GaN) high electron mobility transistor designed
specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer
high efficiency, high gain and wide bandwidth capabilities, which makes the
CGH35015 ideal for 3.3-3.9GHz WiMAX and BWA amplifier applications. The
transistor is available in both screw-down, flange and solder-down, pill packages.
PPacNk:aCgGeHT3y5p0e1: 454F0a1n6d6CaGnHd3454001159P6
Typical Performance Over 3.3-3.8GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
3.3 GHz
3.4 GHz
3.5 GHz
3.6 GHz
3.7 GHz
Small Signal Gain
13.6
12.8
12.3
12.2
12.3
3.8 GHz
12.8
EVM at PAVE = 24 dBm
2.71
2.31
2.1
2.12
2.54
3.04
EVM at PAVE = 33 dBm
2.63
2.29
1.93
1.70
1.70
2.14
Drain Efficiency at PAVE = 33 dBm
24.0
25.5
26.1
25.6
23.8
2.38
Note:
Measured in the CGH35015F-AMP amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix,
64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3,
PAR = 9.8 dB @ 0.01 % Probability on CCDF.
Units
dB
dBm
dBm
%
Features
• 3.3 - 3.9 GHz Operation
• 15 W Peak Power Capability
• 12 dB Small Signal Gain
• 2.0 W PAVE at < 2.0 % EVM
• 26 % Efficiency at 2 W Average Power
• WiMAX Fixed Access 802.16-2004 OFDM
• WiMAX Mobile Access 802.16e OFDMA
Subject to change without notice.
www.cree.com/wireless
1
1 page  
Typical Performance
Figure 5.- Simulated Maximum Available Gain and K Factor of the CGH35015
GMAX and KVoDDf =C2G8HV3, 5ID0Q1=51F00atmIAdq of 100mA
Typical Noise Performance
Figure 6.- Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH35015
VDD = 28 V, IDQ = 100 mA
Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
5 CGH35015 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
5 Page 
Product Ordering Information
Order Number
Description
CGH35015F
GaN HEMT
Unit of Measure
Each
Image
CGH35015P
GaN HEMT
Each
CGH35015-TB
Test board without GaN HEMT
Each
CGH35015F-AMP
Test board with GaN HEMT installed
Each
Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
11 CGH35015 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet CGH35015.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
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