|
|
PDF CGH31240F Data sheet ( Hoja de datos )
| Número de pieza | CGH31240F | |
| Descripción | GaN HEMT | |
| Fabricantes | Cree | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de CGH31240F (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
|
No Preview Available !
CGH31240F
240 W, 2700-3100 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems
Cree’s CGH31240F is a gallium nitride (GaN) high electron mobility transistor (HEMT)
designed specifically with high efficiency, high gain and wide bandwidth capabilities,
which makes the CGH31240F ideal for 2.7-3.1GHz S-Band radar amplifier applications.
The transistor is supplied in a ceramic/metal flange package.
PackaPgeN:TCypGeH: 3414204200F1
Typical Performance Over 2.7-3.1 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
2.7 GHz
2.8 GHz
2.9 GHz
3.0 GHz
Output Power
243 249 249 245
3.1 GHz
243
Gain
11.9
11.9
11.9
11.9
11.9
Power Added Efficiency
60
61
60
59
52
Note:
Measured in the CGH31240F-AMP amplifier circuit, under 300 μs pulse width, 20% duty cycle, PIN = 42 dBm.
Units
W
dB
%
Features
• 2.7 - 3.1 GHz Operation
• 12 dB Power Gain
• 60 % Power Added Efficiency
• < 0.2 dB Pulsed Amplitude Droop
Subject to change without notice.
www.cree.com/rf
1
1 page  
Typical Performance
Figure 5.- Typical Pulsed Output Power and Power Added Efficiency vs Frequency
of the CGH3124C0GFHM31e2a4s0uRrFedPeinrfoCrGmHan3c1e2v4s0FFr-eAqMuePncAymplifier Circuit.
VDS = 28 V, IDS =P1inA=, 4P2INd=B4m2- dPBumlse, P= u3l0s0euWs i@dt2h0=%3d0u0tyμcSy,cDleuty Cycle = 20%
55.0 100
54.5
90
54.0
80
53.5
70
53.0
60
52.5
50
52.0
51.5
2600
Typical Pulse Droop Performance
Pout (dBm)
PAE (%)
2700
2800
2900
3000
Frequency (MHz)
CGH31240F Pulsed Power Performance
54.3
54.2
300 us 5 %
1 ms 5 %
5 ms 5 %
300 us 10 %
1 ms 10 %
5 ms 10 %
300 us 20 %
1 ms 20 %
5 ms 20 %
300 us 25 %
1 ms 25 %
5 ms 25 %
54.1
54.0
53.9
53.8
53.7
53.6
53.5
53.4
53.3
-1 0 1 2 3 4 5 6
Time (ms)
Electrostatic Discharge (ESD) Classifications
3100
40
30
3200
Pulse Width
10 us
50 us
100 us
300 us
1 ms
5 ms
Duty Cycle (%)
5-25
5-25
5-25
5-25
5-25
5-25
Droop (dB)
0.05
0.05
0.10
0.15
0.30
0.60
Parameter
Human Body Model
Charge Device Model
Symbol
HBM
CDM
Class
1A (> 250 V)
II (200 < 500 V)
Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
5 CGH31240F Rev 2.0
Test Methodology
JEDEC JESD22 A114-D
JEDEC JESD22 C101-C
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
5 Page 
Product Ordering Information
Order Number
Description
CGH31240F
GaN HEMT
Unit of Measure
Each
Image
CGH31240F-TB
Test board without GaN HEMT
Each
CGH31240F-AMP
Test board with GaN HEMT installed
Each
Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
11 CGH31240F Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet CGH31240F.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| CGH31240F | GaN HEMT | Cree |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |