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PDF XL1002-BD Data sheet ( Hoja de datos )

Número de pieza XL1002-BD
Descripción Low Noise Amplifier
Fabricantes MA-COM 
Logotipo MA-COM Logotipo



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XL1002-BD
Low Noise Amplifier
20.0-36.0 GHz
Features
Balanced Design
Excellent Input/Output Match
Self-biased Architecture
23.0 dB Small Signal Gain
2.6 dB Noise Figure
100% On-Wafer RF, DC and Noise Figure
Testing
100% Visual Inspection to MIL-STD-883 Method
2010
RoHS* Compliant and 260°C Reflow Compatible
Description
M/A-COM Tech’s three stage balanced 20.0-36.0
GHz GaAs MMIC low noise amplifier has a small
signal gain of 23.0 dB with a noise figure of 2.6 dB
across the band. This MMIC uses M/A-COM Tech’s
GaAs PHEMT device model technology, and is
based upon electron beam lithography to ensure
high repeatability and uniformity. The chip has
surface passivation to protect and provide a rugged
part with backside via holes and gold metallization to
allow either a conductive epoxy or eutectic solder
die attach process. This device is well suited for
Millimeter-wave Point-to-Point Radio, LMDS,
SATCOM and VSAT applications.
Ordering Information
Part Number
Package
XL1002-BD-000V
V” - vacuum release
gel paks
XL1002-BD-EV1
evaluation module
Chip Device Layout
Rev. V1
Absolute Maximum Ratings
Parameter
Absolute Max.
Supply Voltage (Vd)
Supply Current (Id)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)1
+6.0 VDC
120 mA
+15.0 dBm
-65 °C to +165 °C
-55 °C to +85 °C
+175 °C
1. Channel temperature directly affects a device's MTTF. Chan-
nel temperature should be kept as low as possible to maximize
lifetime.
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
India Tel: +91.80.43537383
China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.

1 page




XL1002-BD pdf
XL1002-BD
Low Noise Amplifier
20.0-36.0 GHz
Typical Performance Curves (On-Wafer1) (cont.)
Rev. V1
16
14
12
10
8
6
4
2
0
-2
18.0
20.0
22.0
24.0
26.0
28.0
30.0
32.0
34.0
36.0
38.0
Max
Median
Mean
-3sigma
20
18
16
14
12
10
8
6
4
20 22 24 26 28 30 32 34 36
Note [1] Measurements On-Wafer data has been taken using bias conditions as shown. Measurements are referenced 150 um in from
RF In/Out pad edge. For optimum performance M/A-COM-Tech T-pad transition is recommended. For additional information see the M/A-
COM-Tech “T-Pad Transition” application note.
5
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
India Tel: +91.80.43537383
China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.

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