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Número de pieza | INJ0212AP1 | |
Descripción | Silicon P-channel MOSFET | |
Fabricantes | Isahaya Electronics Corporation | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de INJ0212AP1 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! INJ0212AP1
High Speed Switching
Silicon P-channel MOSFET
DESCRIPTION
INJ0210AP1 is a Silicon P-channel MOSFET.
This product is most suitable for use such as portable
machinery, because of low voltage drive and low on resistance.
OUTLINE DRAWING
4.4
1.6
UNIT:mm
1.5
FEATURE
SDG
MARKING
・Input impedance is high, and not necessary to
consider a drive electric current.
・High drain current ID=-2.5A
・Vth is low, and drive by low voltage is possible. Vth=1.0~2.5V
・Low on Resistance. RDS(on)=95mΩ(TYP).
・High speed switching.
APPLICATION
0.5
1.5
3.0
0.4
0.4
TERMINAL CONNECTOR
S:SOURCE
D:DRAIN
G:GATE
JEITA:SC-62
JEDEC:SOT-89
Switching
MAXIMUM RATING (Ta=25℃)
Symbol
Parameter
Rating
UNIT
VDSS Drain-Source Voltage
-30 V
VGSS
ID(DC)
Gate-Source Voltage
Drain Current (DC)
±20
-2.5
V
A
IDP Drain Current(Pulse) ※1
-5 A
PD Total Power Dissipation
750(※2)
mW
Tch Channel Temperature
150 ℃
Tstg Storage Temperature
-55~+150
℃
※1:PW≦10µs, Duty cycle≦1%
※2:package mounted on 9mm×19mm×1mm glass-epoxy substrate
EQUIVALENT
D
G
S
MARKING
Type Name
JJ
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Parameter
Symbol
Test Condition
Drain-Source Breakdown Voltage
Gate-Source Leak Current
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Forward Transfer Admittance
Static Drain-Source On-State Resistance
Input Capacitance
Output Capacitance
Switching Time
V(BR)DSS
IGSS
IDSS
Vth
|Yfs|
RDS(ON)
Ciss
Coss
ton
toff
ID=-100µA,VGS=0V
VGS=±20V,ID=0A
VDS=-30V,VGS=0V
ID=-250µA,VDS=VGS
VDS=-10V,ID=-1.2A
ID=-0.5A,VGS=-4.5V
ID=-0.5A,VGS=-10V
VDS=-10V,VGS=0V,f=1MHz
VDD=-10V,ID=-2.5A,VGS=-0~-5V
Limit
Unit
MIN TYP MAX
-30 -
-V
-
-
±10
µA
- - -1 µA
-1 - -2.5 V
- 3.0 - S
- 120 -
mΩ
- 95 -
- 500 -
pF
- 100 -
- 35 -
ns
- 50 -
ISAHAYA ELECTRONICS CORPORATION
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet INJ0212AP1.PDF ] |
Número de pieza | Descripción | Fabricantes |
INJ0212AP1 | Silicon P-channel MOSFET | Isahaya Electronics Corporation |
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