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Número de pieza | DAN217N3 | |
Descripción | HIGH-SPEED SWITCHING DIODE | |
Fabricantes | CYStech | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de DAN217N3 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! CYStech Electronics Corp.
Spec. No. : C303N3C
Issued Date : 2002.12.18
Revised Date : . .
Page No. : 1/3
DAN217N3
HIGH-SPEED SWITCHING DIODE
Description
The DAN217N3 consists of two diodes in a plastic surface mount package. The diodes are
connected in series and the unit is designed for high-speed switching application in hybrid thick
and thin-film circuits.
Features
• Small SMD Package (SOT-23)
• Ultra-high Speed
• Low Forward Voltage
• Fast Reverse Recovery Time
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature............................................................................................ -65 ~ +150 °C
Junction Temperature .................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 250 mW
• Maximum Voltages and Currents (Ta=25°C)
Reverse Voltage .................................................................................................................. 70 V
Repetitive Reverse Voltage ................................................................................................. 70 V
Forward Current ............................................................................................................. 150 mA
Repetitive Forward Current ............................................................................................ 500 mA
Forward Surge Current (1ms)....................................................................................... 1000 mA
Characteristics (Ta=25°C)
Characteristic
Reverse Breakdown Voltage
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
Symbol
V(BR)
VF(1)
VF(2)
VF(3)
VF(4)
IR
CT
Trr
Condition
IR=100uA
IF=1mA
IF=10mA
IF=50mA
IF=150mA
VR=70
VR=0, f=1MHz
IF=IR=10mA, RL=100Ω
measured at IR=1mA
Min Max Unit
70 -
V
- 715 mV
- 855 mV
- 1000 mV
- 1250 mV
- 2.5 uA
- 1.5 pF
- 6 nS
DAN217N3
CYStek Product Specification
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet DAN217N3.PDF ] |
Número de pieza | Descripción | Fabricantes |
DAN217N3 | HIGH-SPEED SWITCHING DIODE | CYStech |
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