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PDF 2SB772T Data sheet ( Hoja de datos )
| Número de pieza | 2SB772T | |
| Descripción | PNP SILICON EPITAXIALPOWER TRANSISTOR | |
| Fabricantes | SEMTECH | |
| Logotipo |  |
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ST 2SB772T
PNP SILICON EPITAXIAL POWER TRANSISTOR
These devices are intended for use in audio
frequency power amplifier and low speed switching
applications
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current - DC
Collector Current - Pulse 1)
Base Current - DC
Total Power Dissipation @ TC = 25 OC
Total Power Dissipation @ TA = 25 OC
Operating and Storage Junction Temperature Range
1) PW=10ms, Duty Cycle ≤ 50%
Symbol
-VCBO
-VCEO
-VEBO
-IC
-IC
-IB
PD
PD
TJ, Ts
E
C
B
TO-126 Plastic Package
Value
40
30
5
3
7
0.6
10
1.0
- 65 to + 150
Unit
V
V
V
A
A
A
W
W
OC
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at -VCE = 2 V, -IC = 20 mA
at -VCE = 2 V, -IC = 1 A
Collector Emitter Breakdown Voltage
at -IC = 1 mA
Collector Base Breakdown Voltage
at -IC = 1 mA
Emitter Base Breakdown Voltage
at -IE = 1 mA
Collector Cutoff Current
at -VCB = 30 V
Emitter Cutoff Current
at -VEB = 3 V
Collector Emitter Saturation Voltage
at -IC = 2 A, -IB = 200 mA
Base Emitter Saturation Voltage
at -IC = 2 A, -IB = 200 mA
Output Capacitance
at -VCB = 10 V, f = 1 MHz
Current Gain Bandwidth Product
at -IC = 100 mA, -VCE = 5 V
Symbol
hFE
R hFE
Q hFE
P hFE
E hFE
-V(BR)CEO
-V(BR)CBO
-V(BR)EBO
-ICBO
-IEBO
-VCE(sat)
-VBE(sat)
CO
fT
Min.
30
60
100
160
200
30
40
5
-
-
-
-
-
-
Typ. Max. Unit
- --
- 120 -
- 200 -
- 320 -
- 400 -
- -V
- -V
- -V
- 1 µA
- 1 µA
- 0.5 V
- 2V
55 - pF
80 - MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 25/05/2006
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2SB772T.PDF ] | |
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