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Número de pieza | DMN4010LFG | |
Descripción | N-CHANNEL ENHANCEMENT MODE MOSFET | |
Fabricantes | Diodes | |
Logotipo | ||
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No Preview Available ! DMN4010LFG
40V N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI®
Product Summary
V(BR)DSS
40V
RDS(ON) max
12mΩ @ VGS = 10V
15mΩ @ VGS = 4.5V
ID max
TA = +25°C
11.5A
10.3A
Features and Benefits
• Low RDS(ON) – ensures on state losses are minimized
• Small, form factor, thermally efficient package enables higher
density end products
• Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications such as:
• Backlighting
• Power Management Functions
• DC-DC Converters
POWERDI 3333-8
Mechanical Data
• Case: POWERDI 3333-8
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections Indicator: See Diagram
• Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.072 grams (Approximate)
D
S Pin 1
S
S
G
D
D
D
D
Bottom View
Top View
G
S
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMN4010LFG-7
DMN4010LFG-13
Case
POWERDI 3333-8
POWERDI 3333-8
Packaging
2,000/Tape & Reel
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
POWERDI 3333-8
YYWW
N41
N41= Product Type Marking Code
YYWW = Date Code Marking
YY = Last Digit of Year (ex: 13 = 2013)
WW = Week Code (01 ~ 53)
POWERDI is a registered trademark of Diodes Incorporated
DMN4010LFG
Document number: DS36764 Rev. 2 - 2
1 of 7
www.diodes.com
March 2015
© Diodes Incorporated
1 page 30
25
20
TA = 150°C
15 TA = 125°C
TA = 85°C
10 TA = 25°C
TA = -55°C
5
0
0 0.3 0.6 0.9 1.2 1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
10
VDS = 20V
ID = 14A
8
10000
1000
DMN4010LFG
Ciss
100
Coss
Crss
10 f = 1MHz
0 5 10 15 20 25 30 35
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
1000
RDS(on)
Limited
40
100
6
4
2
0
0 5 10 15 20 25 30 35 40
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
10
DC
1
PW = 10s
PW = 1s
PW = 100ms
PW = 10ms
0.1
TJ(max) = 150°C
TA = 25°C
PW = 1ms
PW = 100µs
VGS = 10V
Single Pulse
0.01 DUT on 1 * MRP Board
0.1 1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
100
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1 D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
D = Single Pulse
0.001
0.00001
0.0001
0.001
RθJA(t) = r(t) * RθJA
RθJA = 72°C/W
Duty Cycle, D = t1/ t2
0.01 0.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
100 1000
POWERDI is a registered trademark of Diodes Incorporated
DMN4010LFG
Document number: DS36764 Rev. 2 - 2
5 of 7
www.diodes.com
March 2015
© Diodes Incorporated
5 Page |
Páginas | Total 7 Páginas | |
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