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Número de pieza | DMN3730U | |
Descripción | N-CHANNEL ENHANCEMENT MODE MOSFET | |
Fabricantes | Diodes | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de DMN3730U (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! A Product Line of
Diodes Incorporated
DMN3730U
30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23
Product Summary
V(BR)DSS
30V
Max RDS(on)
460mΩ @ VGS= 4.5V
560mΩ @ VGS= 2.5V
ID Max (Note 5)
TA = 25°C
0.94A
0.85A
Features and Benefits
• Low VGS(th), can be driven directly from a battery
• Low RDS(on)
• “Lead Free”, RoHS Compliant (Note 1)
• Halogen and Antimony Free. "Green" Device (Note 2)
• ESD Protected Gate 2kV
• Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
• Load switch
• Portable applications
• Power Management Functions
Mechanical Data
• Case: SOT23
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish-Matte Tin.
• Weight: 0.08 grams (approximate)
SOT23
Drain
Gate
Body
Diode
D
ESD PROTECTED TO 2kV
Top View
Gate
Protection
Diode
Source
Equivalent Circuit
GS
Top View
Pin-Out
Ordering Information (Note 3)
Part Number
DMN3730U-7
Marking
N3U
Reel size (inches)
7
Notes:
1. No purposefully added lead
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Tape width (mm)
8
Quantity per reel
3,000
Marking Information
Date Code Key
Year
Code
Month
Code
2011
Y
Jan Feb
12
N3U
N3U = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
2012
Z
Mar
3
2013
A
Apr May
45
2014
B
Jun Jul
67
2015
C
Aug
8
Sep
9
2016
D
Oct
O
2017
E
Nov Dec
ND
DMN3730U
Datasheet number: DS35308 Rev. 2 - 2
1 of 7
www.diodes.com
July 2011
© Diodes Incorporated
1 page 1.2
1.0
0.8
ID = 1mA
0.6
ID = 250µA
0.4
0.2
0
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 10 Gate Threshold Variation vs. Ambient Temperature
100
Ciss
10 Coss
Crss
f = 1MHz
1
0 5 10 15 20 25 30
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 Typical Total Capacitance
8
6 VDS = 15V
ID = 1A
4
A Product Line of
Diodes Incorporated
DMN3730U
2.0
1.6
TA = 25°C
1.2
0.8
0.4
0
0 0.2 0.4 0.6 0.8
1 1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 11 Diode Forward Voltage vs. Current
10,000
1,000
100
10
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
1
0 5 10 15 20 25 30
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 13 Typical Leakage Current
vs. Drain-Source Voltage
2
0
0 0.5 1 1.5 2 2.5
Qg, TOTAL GATE CHARGE (nC)
Fig. 14 Gate-Charge Characteristics
DMN3730U
Datasheet number: DS35308 Rev. 2 - 2
3
5 of 7
www.diodes.com
July 2011
© Diodes Incorporated
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet DMN3730U.PDF ] |
Número de pieza | Descripción | Fabricantes |
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