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PDF DMN3135LVT Data sheet ( Hoja de datos )

Número de pieza DMN3135LVT
Descripción DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
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DMN3135LVT
30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
30V
RDS(on)
60mΩ @ VGS = 10V
100mΩ @ VGS = 4.5V
ID
TA = 25°C
3.5A
2.8A
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Backlighting
DC-DC Converters
Power management functions
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
Case: TSOT26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram
Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.013 grams (approximate)
TSOT26
Top View
G1 1
S2 2
G2 3
6 D1
5 S1
4 D2
Top View
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMN3135LVT-7
Case
TSOT26
Packaging
3000 / Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
31D
31D = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2010
X
Jan Feb
12
2011
Y
Mar
3
2012
Z
Apr May
45
2013
A
Jun Jul
67
2014
B
Aug
8
Sep
9
2015
C
Oct
O
2016
D
Nov Dec
ND
DMN3135LVT
Document number: DS35408 Rev. 6 - 2
1 of 6
www.diodes.com
May 2012
© Diodes Incorporated

1 page




DMN3135LVT pdf
DMN3135LVT
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
Single Pulse
0.001
0.00001
0.0001
D = 0.9
RθJA(t) = r(t) * RθJA
RθJA = 157°C/W
Duty Cycle, D = t1/ t2
0.001
0.01
0.1
1
t1, PULSE DURATION TIMES (sec)
Fig. 13 Transient Thermal Resistance
10
100 1,000
Package Outline Dimensions
D
e1
E1 E
A A2
A1
e
6x b
c
L
4x θ1
L2
θ
TSOT26
Dim Min Max Typ
A 1.00
A1 0.01 0.10
A2 0.84 0.90
D − − 2.90
E − − 2.80
E1 − − 1.60
b 0.30 0.45
c 0.12 0.20
e − − 0.95
e1 − − 1.90
L 0.30 0.50
L2 − − 0.25
θ 0° 8° 4°
θ1 4° 12°
All Dimensions in mm
Suggested Pad Layout
CC
Y1
Y (6x)
X (6x)
Dimensions
C
X
Y
Y1
Value (in mm)
0.950
0.700
1.000
3.199
DMN3135LVT
Document number: DS35408 Rev. 6 - 2
5 of 6
www.diodes.com
May 2012
© Diodes Incorporated

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