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PDF DMN3026LVT Data sheet ( Hoja de datos )

Número de pieza DMN3026LVT
Descripción N-CHANNEL ENHANCEMENT MODE MOSFET
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DMN3026LVT
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
30V
RDS(on) max
23m@ VGS = 10V
30m@ VGS = 4.5V
ID
TA = +25°C
6.6A
5.8A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(ON)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
DC-DC Converters
Power management functions
Backlighting
Features and Benefits
Low Input Capacitance
Low On-Resistance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: TSOT26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208 e3
Weight: 0.013 grams (approximate)
TSOT26
Top View
D1
D2
G3
6D
5D
4S
Top View
Pin Configuration
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMN3026LVT-7
DMN3026LVT-13
Case
TSOT26
TSOT26
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
N5L
Shanghai A/T Site
Date Code Key
Year
Code
2010
X
Month
Code
Jan Feb
12
N5L
Chengdu A/T Site
N5L = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y̅ M = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y̅ = Year (ex: A = 2013)
M = Month (ex: 9 = September)
2011
Y
Mar
3
2012
Z
Apr May
45
2013
A
Jun Jul
67
2014
B
Aug
8
Sep
9
2015
C
Oct
O
2016
D
Nov Dec
ND
DMN3026LVT
Document number: DS36813 Rev. 3 - 2
1 of 6
www.diodes.com
April 2014
© Diodes Incorporated

1 page




DMN3026LVT pdf
DMN3026LVT
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01 D = 0.01
D = 0.005
D = Single Pulse
0.001
0.00001
0.0001
RJA(t) = r(t) * RJA
RJA = 97°C/W
Duty Cycle, D = t1/ t2
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
100 1000
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
D
e1
E1 E
A A2
A1
e
6x b
L
4x1
c
L2
TSOT26
Dim Min Max Typ
A — 1.00 —
A1 0.01 0.10 —
A2 0.84 0.90 —
D — — 2.90
E — — 2.80
E1 — — 1.60
b 0.30 0.45 —
c 0.12 0.20 —
e — — 0.95
e1 — — 1.90
L 0.30 0.50 —
L2 — — 0.25
θ 0° 8° 4°
θ1 4° 12° —
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version.
CC
Y1
Y (6x)
X (6x)
Dimensions
C
X
Y
Y1
Value (in mm)
0.950
0.700
1.000
3.199
DMN3026LVT
Document number: DS36813 Rev. 3 - 2
5 of 6
www.diodes.com
April 2014
© Diodes Incorporated

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