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PDF DMN3016LK3 Data sheet ( Hoja de datos )
| Número de pieza | DMN3016LK3 | |
| Descripción | N-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | Diodes | |
| Logotipo |  |
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DMN3016LK3
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
30V
RDS(on)
12mΩ @ VGS = 10V
16mΩ @ VGS = 4.5V
ID
TC = +25°C
37.8A
32.8A
Features
100% Unclamped Inductive Switch (UIS) Test in Production
Low On-Resistance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Backlighting
DC-DC Converters
Power Management Functions
Mechanical Data
Case: TO252
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e3
Weight: 0.33 grams (Approximate)
TO252
D
D
Top View
D
GS
Top View
Pin-Out
G
S
Equivalent Circuit
Ordering Information (Notes 4)
Notes:
Product
DMN3016LK3-13
Case
TO252
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
N3016L
YYWW
= Manufacturer’s Marking
NYY30W.1W6L==
Product Type Marking
Date Code Marking
Code
YY = Year (ex: 14 = 2014)
WW = Week (01 - 53)
DMN3016LK3
Document Number DS37206 Rev. 4 - 2
1 of 7
www.diodes.com
November 2014
© Diodes Incorporated
1 page  
10000
1000
100
10
1
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
10000
1000
100
DMN3016LK3
Ciss
Coss
Crss
0.1
0
10 20 30
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Drain-Source Leakage Current vs. Voltage
10
9
8
7
6
5
VDS = 15V
ID = 12A
4
3
2
1
00 5 10 15 20 25
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
10
0 2 4 6 8 10 12 14 16 18 20
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
D = Single Pulse
0.001
0.000001
0.00001
DMN3016LK3
Document Number DS37206 Rev. 4 - 2
RJA(t) = r(t) * RJA
RJA = 3.08°C/W
Duty Cycle, D = t1/ t2
0.0001
0.001
0.01
0.1
t1, PULSE DURATION TIME (sec)
Figure 12 Transient Thermal Resistance
5 of 7
www.diodes.com
1
10
November 2014
© Diodes Incorporated
5 Page | ||
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| PDF Descargar | [ Datasheet DMN3016LK3.PDF ] | |
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