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PDF CJD122 Data sheet ( Hoja de datos )
| Número de pieza | CJD122 | |
| Descripción | POWER DARLINGTON TRANSISTORS | |
| Fabricantes | Central Semiconductor | |
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Hay una vista previa y un enlace de descarga de CJD122 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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CJD122 NPN
CJD127 PNP
SURFACE MOUNT SILICON
COMPLEMENTARY
POWER DARLINGTON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CJD122 and
CJD127 are complementary silicon power Darlington
transistors manufactured in a surface mount package
designed for low speed switching and amplifier
applications.
MARKING: FULL PART NUMBER
DPAK CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Peak Collector Current
ICM
Continuous Base Current
IB
Power Dissipation
PD
Power Dissipation (TA=25°C)
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
ΘJC
Thermal Resistance
ΘJA
100
100
5.0
8.0
16
120
20
1.75
-65 to +150
6.25
71.4
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICEO
VCE=50V
ICEV
VCE=100V, VBE(off)=1.5V
ICEV
VCE=100V, VBE(off)=1.5V, TC=125°C
ICBO
VCB=100V
IEBO
VEB=5.0V
BVCEO
IC=30mA
100
VCE(SAT) IC=4.0A, IB=16mA
VCE(SAT) IC=8.0A, IB=80mA
VBE(SAT) IC=8.0A, IB=80mA
VBE(ON)
VCE=4.0V, IC=4.0A
hFE VCE=4.0V, IC=4.0A
1000
hFE VCE=4.0V, IC=8.0A
100
fT
VCE=4.0V, IC=3.0A, f=1.0MHz
4.0
Cob VCB=10V, IE=0, f=1.0MHz (CJD122)
Cob VCB=10V, IE=0, f=1.0MHz (CJD127)
hfe VCE=4.0V, IC=3.0A, f=1.0kHz
MAX
10
10
500
10
2.0
2.0
4.0
4.5
2.8
12000
200
300
300
UNITS
V
V
V
A
A
mA
W
W
°C
°C/W
°C/W
UNITS
μA
μA
μA
μA
mA
V
V
V
V
V
MHz
pF
pF
R3 (21-January 2013)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet CJD122.PDF ] | |
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