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PDF 2N6301 Data sheet ( Hoja de datos )

Número de pieza 2N6301
Descripción DARLINGTON SILICON POWER TRANSISTORS
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No Preview Available ! 2N6301 Hoja de datos, Descripción, Manual

2N6300
2N6301
MECHANICAL DATA
Dimensions in mm (inches)
3.68
(0.145) rad.
max.
3.61 (0.142)
4.08(0.161)
rad.
12
6.35 (0.250)
8.64 (0.340)
DARLINGTON SILICON
POWER TRANSISTORS
Designed for general purpose
amplifier and low frequency
switching applications.
4.83 (0.190)
5.33 (0.210)
9.14 (0.360)
min.
1.27 (0.050)
1.91 (0.750)
Pin 1 Base
TO–66 (TO-213AA)
Pin 2 Emitter
Case Collector
FEATURES
• High DC Current Gain
• Monolithic Construction with Built-in
Base–Emitter Shunt Resistors
ABSOLUTE MAXIMUM RATINGS(Tc = 25°C unless otherwise stated) 2N6300
2N6301
VCEO
Collector – Emitter Voltage
60V 80V
VCBO
Collector – Base Voltage
60V 80V
VEBO
Emitter – Base Voltage
5V
IC Collector Current
Continuous
8A
Peak
16A
IB Base Current
PD Total Dissipation @ TC = 25°C
Derate above 25°C
120mA
100W
75W
0.571W/°C 0.428W/°C
TSTG , TJ
TθJC
Operating and Storage Junction Temperature Range
Thermal Resistance – Junction - Case
–65 to +200°C
1.75°C/W
2.33°C/W
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected] Website: http://www.semelab.co.uk
Document Number 3979
Issue 1

1 page





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