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PDF 2N6045 Data sheet ( Hoja de datos )
| Número de pieza | 2N6045 | |
| Descripción | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS | |
| Fabricantes | Central Semiconductor | |
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2N6040 2N6041 2N6042 PNP
2N6043 2N6044 2N6045 NPN
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6040 and
2N6043 Series types are Complementary Silicon
Power Transistors, manufactured by the epitaxial
base process, designed for general purpose amplifier
applications.
MARKING: FULL PART NUMBER
TO-220 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
PD
TJ, Tstg
ΘJC
2N6040
2N6043
60
60
2N6041
2N6044
80
80
5.0
8.0
16
120
75
-65 to +150
1.67
2N6042
2N6045
100
100
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
ICBO
ICEV
ICEV
ICEO
IEBO
BVCEO
BVCEO
BVCEO
VCE(SAT)
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(ON)
hFE
hFE
hFE
VCB=Rated VCBO
VCE=Rated VCEO, VBE(OFF)=1.5V
VCE=Rated VCEO, VBE(OFF)=1.5V, TC=150°C
VCE=Rated VCEO
VEB=5.0V
IC=100mA (2N6040, 2N6043)
IC=100mA (2N6041, 2N6044)
IC=100mA (2N6042, 2N6045)
IC=4.0A, IB=16mA (2N6040, 2N6041, 2N6043, 2N6044)
IC=3.0A, IB=12mA (2N6042, 2N6045)
IC=8.0A, IB=80mA
IC=8.0A, IB=80mA
VCE=4.0V, IC=4.0A
VCE=4.0V, IC=4.0A (2N6040, 2N6041, 2N6043, 2N6044)
VCE=4.0V, IC=3.0A (2N6042, 2N6045)
VCE=4.0V, IC=8.0A
MIN
60
80
100
1,000
1,000
100
MAX
20
20
200
20
2.0
2.0
2.0
4.0
4.5
2.8
20,000
20,000
UNITS
V
V
V
A
A
mA
W
°C
°C/W
UNITS
µA
µA
µA
µA
mA
V
V
V
V
V
V
V
V
R1 (16-November 2009)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N6045.PDF ] | |
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