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PDF DMG7401SFGQ Data sheet ( Hoja de datos )
| Número de pieza | DMG7401SFGQ | |
| Descripción | P-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | Diodes | |
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DMG7401SFGQ
P-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI®
Product Summary
V(BR)DSS
-30V
RDS(ON) Max
13mΩ @ VGS = -10V
25mΩ @ VGS = -4.5V
ID Max
TA = +25°C
-9.8A
-7.0A
Description
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
Features and Benefits
Low RDS(ON) – Ensures On-State Losses Are Minimized
Small form factor thermally efficient package enables higher
density end products
Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Applications
Backlighting
Power Management Functions
DC-DC Converters
Mechanical Data
Case: POWERDI®3333-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.0174 grams (Approximate)
POWERDI3333-8
S Pin 1
S
S
G
G
D
ESD PROTECTED
Top View
D
D
D
D
Bottom View
Gate Protection
Diode
S
Equivalent Circuit
Ordering Information (Note 5)
Notes:
Part Number
DMG7401SFGQ-7
DMG7401SFGQ-13
Case
POWERDI3333-8
POWERDI3333-8
Packaging
2,000/Tape & Reel
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
POWERDI is a registered trademark of Diodes Incorporated.
DMG7401SFGQ
Document number: DS37980 Rev. 2 - 2
1 of 8
www.diodes.com
September 2015
© Diodes Incorporated
1 page  
3.0
2.5
2.0
1.5
1.0
0.5
0
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
10,000
f = 1MHz
1,000
Ciss
Coss
Crss
100
0
400
350
300
250
5 10 15 20 25
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
30
Single Pulse
RJA = 135C/W
RJA(t) = r(t) * RJA
TJ - TA = P * RJA(t)
200
150
100
50
0
1E-05 1E-04 0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIME (sec)
Fig. 11 Single Pulse Maximum Power Dissipation
DMG7401SFGQ
30
25
20
15
10
5
0
0.4 0.6
0.8 1.0 1.2
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
10
8
6
4
2
0
0
100
5 10 15 20 25 30 35 40 45
Qg, TOTAL GATE CHARGE (nC)
Fig. 10 Gate-Charge Characteristics
RDS(on)
Limited
10
DC
1 PW = 10s
PW = 1s
PW = 100ms
PW = 10ms
0.1 TJ(max) = 150°C
TA = 25°C
VGS = -10V
Single Pulse
0.01 DUT on 1 * MRP Board
0.01 0.1
PW = 1ms
PW = 100µs
1 10
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 SOA, Safe Operation Area
100
DMG7401SFGQ
Document number: DS37980 Rev. 2 - 2
5 of 8
www.diodes.com
September 2015
© Diodes Incorporated
5 Page | ||
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| PDF Descargar | [ Datasheet DMG7401SFGQ.PDF ] | |
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