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PDF DMG3401LSN Data sheet ( Hoja de datos )

Número de pieza DMG3401LSN
Descripción 30V P-CHANNEL ENHANCEMENT MODE MOSFET
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DMG3401LSN
30V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
-30V
RDS(on) max
50mΩ @ VGS = -10V
60mΩ @ VGS = -4.5V
85mΩ @ VGS = -2.5V
ID
TA = 25°C
-3.7A
-3.3A
-2.7A
Description
This new generation Small-Signal enhancement mode MOSFET
features low on-resistance and fast switching, making it ideal for high
efficiency power management applications.
Applications
Motor control
Backlighting
DC-DC Converters
Power management functions
Features
Low Input Capacitance
Low On-Resistance
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SC59
Case Material: Molded Plastic “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
SC59
Drain
Gate
D
Top View
Source
Equivalent Circuit
GS
Top View
Ordering Information (Note 4)
Notes:
Part Number
DMG3401LSN-7
Case
SC59
Packaging
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year
Code
Month
Code
2011
Y
Jan Feb
12
G34
G34 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
2012
Z
Mar
3
2013
A
Apr May
45
2014
B
Jun Jul
67
2015
C
Aug
8
Sep
9
2016
D
Oct
O
2017
E
Nov Dec
ND
DMG3401LSN
Document number: DS35502 Rev. 4 - 2
1 of 6
www.diodes.com
October 2012
© Diodes Incorporated

1 page




DMG3401LSN pdf
DMG3401LSN
1
D = 0.7
D = 0.5
D = 0.3
0.1 D = 0.1
D = 0.05
D = 0.02
0.01 D = 0.01
D = 0.005
Single Pulse
0.001
0.00001
0.0001
D = 0.9
RθJA(t) = r(t) * RθJA
RθJA = 160°C/W
Duty Cycle, D = t1/ t2
0.001
0.01
0.1
1
t1, PULSE DURATION TIMES (sec)
Figure 13 Transient Thermal Resistance
10
100
1,000
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
BC
G
H
K
N
J DL
M
SC59
Dim Min Max Typ
A 0.35 0.50 0.38
B 1.50 1.70 1.60
C 2.70 3.00 2.80
D - - 0.95
G - - 1.90
H 2.90 3.10 3.00
J 0.013 0.10 0.05
K 1.00 1.30 1.10
L 0.35 0.55 0.40
M 0.10 0.20 0.15
N 0.70 0.80 0.75
α 0° 8° -
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
Z
C
XE
Dimensions
Z
X
Y
C
E
Value (in mm)
3.4
0.8
1.0
2.4
1.35
DMG3401LSN
Document number: DS35502 Rev. 4 - 2
5 of 6
www.diodes.com
October 2012
© Diodes Incorporated

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