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PDF DMC6040SSD Data sheet ( Hoja de datos )
| Número de pieza | DMC6040SSD | |
| Descripción | COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET | |
| Fabricantes | Diodes | |
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DMC6040SSD
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device
Q1
N-Channel
Q2
P-Channel
V(BR)DSS
60V
-60V
RDS(on) max
40mΩ @ VGS = 10V
55mΩ @ VGS = 4.5V
110mΩ @ VGS = -10V
130mΩ @ VGS = -4.5V
ID
TA = +25°C
6.5 A
5.6 A
-3.9 A
-3.6 A
Features and Benefits
• Low Input Capacitance
• Low On-Resistance
• Fast Switching Speed
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(ON)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
• DC-DC Converters
• Power Management Functions
• Backlighting
Mechanical Data
• Case: SO-8
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
• Terminals: Finish – Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208 e3
• Weight: 0.074 grams (approximate)
SO-8 D1 D2
Pin1
Top View
S1 D1
G1 D1
S2 D2 G1
G2
G2
Top View
Pin Configuration
D2
S1
Q1 N-Channel MOSFET
S2
Q2 P-Channel MOSFET
Ordering Information (Note 4)
Notes:
Part Number
DMC6040SSD-13
Case
SO-8
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
85
C6040SD
YY WW
14
Chengdu A/T Site
DMC6040SSD
Document number: DS36829 Rev. 1 - 2
85
C6040SD
YY WW
14
Shanghai A/T Site
= Manufacturer’s Marking
C6040SD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 14= 2014)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
1 of 9
www.diodes.com
June 2014
© Diodes Incorporated
1 page  
DMC6040SSD
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1 D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
D = Single Pulse
0.001
0.00001
0.0001
RθJA(t) = r(t) * RθJA
RθJA = 102°C/W
Duty Cycle, D = t1/ t2
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Figure 12 Transient Thermal Resistance
10
100 1000
Electrical Characteristics P-Channel Q2 (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS (ON)
VSD
Ciss
Coss
Crss
RG
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Min
-60
⎯
⎯
-1
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ
⎯
⎯
⎯
⎯
86
98
-0.7
1030
49.1
38.7
13.6
9.5
19.4
2.3
3.6
3.7
6.3
58.7
26.1
14.85
8.8
Max
⎯
-1
100
-3
110
130
-1.2
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
V
µA
nA
V
mΩ
V
pF
Ω
nC
nS
nS
nC
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. UIS in production with L = 0.1mH, starting TA = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
Test Condition
VGS = 0V, ID = -250µA
VDS = -48V, VGS = 0V
VGS = ±16V, VDS = 0V
VDS = VGS, ID = -250µA
VGS = -10V, ID = -4.5A
VGS = -4.5V, ID =-3.5A
VGS = 0V, IS = -1A
VDS = -30V, VGS = 0V, f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
VDS = -30V, ID = -5A
VGS = -10V, VDS = -30V, RGEN = 6Ω,
ID = -5A
IS = -5A, dI/dt = 100A/μs
IS = -5A, dI/dt = 100A/μs
DMC6040SSD
Document number: DS36829 Rev. 1 - 2
5 of 9
www.diodes.com
June 2014
© Diodes Incorporated
5 Page | ||
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