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PDF DMC4015SSD Data sheet ( Hoja de datos )

Número de pieza DMC4015SSD
Descripción COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
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DMC4015SSD
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device V(BR)DSS
Q1 40V
Q2 -40V
RDS(ON)
15mΩ @ VGS = 10V
20mΩ @ VGS = 4.5V
29mΩ @ VGS = -10V
45mΩ @ VGS = -4.5V
ID
TA = +25°C
12.2A
10.6A
-8.8A
-7.1A
Features and Benefits
Low Input Capacitance
Low On-Resistance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Applications
DC-DC Converters
Power Management Functions
Backlighting
SO-8
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe
Solderable per MIL-STD-202, Method 208 e3
Weight: 0.074 grams (Approximate)
D1 D2
Pin1
Top View
S1 D1
G1 D1
S2 D2 G1
G2
G2 D2
Top View
Pin Configuration
S1
Q N-Channel MOSFET
S2
Q2 P-Channel MOSFET
Ordering Information (Note 4)
Notes:
Part Number
DMC4015SSD-13
Case
SO-8
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
85
C4015SD
YY WW
14
85
C4015SD
YY WW
14
= Manufacturer’s Marking
C4015SD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 14 = 2014)
WW = Week (01 - 53)
DMC4015SSD
Document number: DS37348 Rev. 3 - 2
1 of 9
www.diodes.com
November 2014
© Diodes Incorporated

1 page




DMC4015SSD pdf
DMC4015SSD
Electrical Characteristics P-Channel Q2 (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
VSD
Ciss
Coss
Crss
RG
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Min
-40

-1




Typ

-0.7
1626
135
107
11
17
34
3.7
6.0
3.9
2.8
83
30
17.3
7.2
Max
-1
100
-3
29
45
-1.2




Unit
Test Condition
V VGS = 0V, ID = -250µA
µA VDS = -40V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = -250µA
mΩ VGS = -10V, ID = -3A
VGS = -4.5V, ID = -3A
V VGS = 0V, IS = -1A
pF VDS = -20V, VGS = 0V,
f = 1.0MHz
Ω VDS = 0V, VGS = 0V, f = 1.0MHz
nCVDS = -20V, ID = -3A
nS
VDD = -20V, RL = 1.6Ω
VGS = -10V, RG = 3Ω, ID = -3A
nS IS = -3A, dI/dt = 100A/μs
nC IS = -3A, dI/dt = 100A/μs
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMC4015SSD
Document number: DS37348 Rev. 3 - 2
5 of 9
www.diodes.com
November 2014
© Diodes Incorporated

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