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PDF DMC3400SDW Datasheet ( Hoja de datos )

Número de pieza DMC3400SDW
Descripción COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
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DMC3400SDW Hoja de datos, Descripción, Manual
DMC3400SDW
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device V(BR)DSS
Q1 30
Q2 -30
RDS(ON) max
0.4Ω @ VGS = 10V
0.7Ω @ VGS = 4.5V
0.9Ω @ VGS = -10V
1.7Ω @ VGS = -4.5V
ID max
TA = +25°C
0.65A
0.52A
-0.45A
-0.33A
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making
it ideal for high efficiency power management applications.
Motor Control
Power Management Functions
DC-DC Converters
SOT363
G1
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: SOT363
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish Matte Tin Annealed over Copper
Leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.027 grams (Approximate)
D1
G2
D2
D1 G2 S2
ESD PROTECTED
Top View
Gate Protection
Diode
S1
Q1 N-CHANNEAL
Gate Protection
Diode
S2
Q2 P-CHANNEAL
S1 G1 D2
Top View
Pin out
Ordering Information (Note 4)
Notes:
Part Number
DMC3400SDW-7
DMC3400SDW-13
Case
SOT363
SOT363
Packaging
3000/Tape & Reel
10000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
Code
Month
Code
2014
B
Jan Feb
12
DMC3400SDW
Document number: DS37690 Rev. 1 - 2
CSI
CSI = Product Type Marking Code
YM = Date Code Marking
Y or Y= Year (ex: B = 2014)
M = Month (ex: 9 = September)
2015
C
Mar
3
2016
D
Apr May
45
2017
E
Jun Jul
67
1 of 9
www.diodes.com
2018
F
Aug
8
Sep
9
2019
G
Oct
O
2020
H
Nov Dec
ND
February 2015
© Diodes Incorporated

1 page

DMC3400SDW pdf
0.6
0.5
0.4 VGS=4.5V, ID=200mA
0.3
0.2
0.1 VGS=10V, ID=590mA
0
-50
-25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE ()
Figure 7. On-Resistance Variation with
Temperature
150
1
0.9 VGS=0V
0.8
0.7
0.6
0.5
0.4 TA=150
0.3
0.2 TA=125
0.1
TA=85
TA=25
TA=-55
0
0 0.3 0.6 0.9 1.2 1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
10
8
DMC3400SDW
2
1.8
1.6 ID=1mA
1.4
1.2
ID=250µA
1
0.8
0.6
0.4
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ()
Figure 8. Gate Theshold Variation vs. Junction
Temperature
100
f=1MHz
Ciss
10 Coss
Crss
1
0
5 10 15 20 25
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
30
10
RDS(ON)
Limited
1
6
4
VDS=10V, ID=250mA
2
0
0 0.3 0.6 0.9 1.2
Qg (nC)
Figure 11. Gate Charge
DMC3400SDW
Document number: DS37690 Rev. 1 - 2
DC
PW=10s
0.1 PW=1s
PW=100ms
0.01
0.001
PW=10ms
TJ(Max)=150
TA=25
VGS=10V
PW=1ms
Single Pulse
DUT on 1*MRP Board
PW=100μs
1.5 0.1 1 10 100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
5 of 9
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February 2015
© Diodes Incorporated

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