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PDF DMC3016LSD Data sheet ( Hoja de datos )
| Número de pieza | DMC3016LSD | |
| Descripción | COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET | |
| Fabricantes | Diodes | |
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DMC3016LSD
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device
Q1
Q2
V(BR)DSS
30V
-30V
RDS(ON) Max
16mΩ @ VGS = 10V
20mΩ @ VGS = 4.5V
28mΩ @ VGS = -10V
38mΩ @ VGS = -4.5V
ID
TA = +25°C
8.2A
7.3A
-6.2A
-5.2A
Features and Benefits
Low Input Capacitance
Low On-Resistance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)), yet maintain superior switching performance,
making it ideal for high-efficiency power management applications.
Applications
DC-DC Converters
Power Management Functions
Backlighting
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin Annealed over Copper Leadframe
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (Approximate)
Pin1
SO-8
S1
G1
S2
D1
D1
D2 G1
D1
G2
D2
Top View
G2
Top View
Pin Configuration
D2
S1
N-Channel MOSFET
S2
P-Channel MOSFET
Ordering Information (Note 4)
Notes:
Part Number
DMC3016LSD-13
Case
SO-8
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
85
C3016LD
YY WW
14
= Manufacturer’s Marking
C3016LD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 15 = 2015)
WW = Week (01 - 53)
DMC3016LSD
Document Number: DS36935 Rev. 4 - 2
1 of 10
www.diodes.com
December 2015
© Diodes Incorporated
1 page  
3
2.5
2
ID = 1mA
1.5 ID = 250µA
1
0.5
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
10000
TA = 150°C
1000
TA = 125°C
100
10
TA = 85°C
TA = 25°C
1
0.1
0 10 20 30
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Drain-Source Leakage Current vs. Voltage
10
9
8
7
6
VDS = 15V
ID = 12A
5
4
3
2
1
00 5 10 15 20 25
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
DMC3016LSD
30
25
20
TA = 25°C
15
10
5
0
0 0.2 0.4 0.6 0.8 1 1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
10000
1000
Ciss
100
Coss
Crss
10
0 2 4 6 8 10 12 14 16 18 20
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
100
RDS(on)
Limited
10
DC
PW = 10s
1 PW = 1s
PW = 100ms
PW = 10ms
0.1
TJ(max) = 150°C
TA = 25°C
VGS = 10V
Single Pulse
PW = 1ms
PW = 100µs
0.01 DUT on 1 * MRP Board
0.1 1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
100
DMC3016LSD
Document Number: DS36935 Rev. 4 - 2
5 of 10
www.diodes.com
December 2015
© Diodes Incorporated
5 Page | ||
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