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PDF VS-6CSH02HM3 Data sheet ( Hoja de datos )

Número de pieza VS-6CSH02HM3
Descripción Hyperfast Rectifier
Fabricantes Vishay 
Logotipo Vishay Logotipo



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VS-6CSH02HM3
Vishay Semiconductors
Hyperfast Rectifier, 2 x 3 A FRED Pt®
K
1
2
TO-277A (SMPC)
K
Cathode
Anode 1
Anode 2
FEATURES
• Hyperfast recovery time, reduced Qrr, and soft
recovery
• 175 °C maximum operating junction temperature
• Specified for output and snubber operation
• Low forward voltage drop
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• AEC-Q101 qualified, meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
trr (typ.)
TJ max.
Diode variation
TO-277A (SMPC)
2x3A
200 V
0.94 V
27 ns
175 °C
Dual die
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers specifically
designed with optimized performance of forward voltage
drop and hyperfast recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness, and
reliability characteristics.
These devices are intended for use in snubber, boost,
lighting, piezo-injection, as high frequency rectifiers and
freewheeling diodes.
The extremely optimized stored charge and low recovery
current minimize the switching losses and reduce power
dissipation in the switching element.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
per device
per diode
Non-repetitive peak surge current
per device
per diode
Operating junction and storage temperatures
SYMBOL
VRRM
IF(AV)
IFSM
TJ, TStg
TEST CONDITIONS
TSp = 165 °C
TJ = 25 °C, 6 ms square pulse
VALUES
200
6
3
150
80
-65 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Breakdown voltage,
blocking voltage
VBR,
VR
IR = 100 μA
200
Forward voltage, per diode
IF = 3 A
VF
IF = 3 A, TJ = 125 °C
-
-
Reverse leakage current, per diode
VR = VR rated
IR
TJ = 125 °C, VR = VR rated
-
-
Junction capacitance
CT VR = 200 V
-
TYP.
-
0.87
0.75
-
2
12
MAX.
-
0.94
0.79
2
10
-
UNITS
V
μA
pF
Revision: 26-Nov-14
1 Document Number: 94981
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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VS-6CSH02HM3 pdf
www.vishay.com
DIMENSIONS in inches (millimeters)
TO-277A (SMPC)
Outline Dimensions
Vishay Semiconductors
0.187 (4.75)
0.175 (4.45)
K
0.016 (0.40)
0.006 (0.15)
0.262 (6.65)
0.250 (6.35)
0.242 (6.15)
0.238 (6.05)
2
1
0.171 (4.35)
0.167 (4.25)
0.146 (3.70)
0.134 (3.40)
0.087 (2.20)
0.075 (1.90)
0.047 (1.20)
0.039 (1.00)
Mounting Pad Layout
0.189 (4.80)
MIN.
0.189 (4.80)
0.173 (4.40)
0.155 (3.94)
NOM.
0.049 (1.24)
0.037 (0.94)
0.084 (2.13) NOM.
0.053 (1.35)
0.041 (1.05)
0.030 (0.75) NOM.
0.268
(6.80)
0.041
(1.04)
Conform to JEDEC® TO-277A
0.186 (4.72)
MIN.
0.050 (1.27)
MIN.
0.055 (1.40)
MIN.
Revision: 03-Sep-14
1 Document Number: 95570
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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