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PDF VS-3EJH01-M3 Data sheet ( Hoja de datos )
| Número de pieza | VS-3EJH01-M3 | |
| Descripción | Hyperfast Rectifier | |
| Fabricantes | Vishay | |
| Logotipo |  |
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www.vishay.com
VS-3EJH01-M3
Vishay Semiconductors
Hyperfast Rectifier, 3 A FRED Pt®
Cathode
Anode
SlimSMA (DO-221AC)
FEATURES
• Hyperfast recovery time, reduced Qrr, and soft
recovery
• 175 °C maximum operating junction temperature
• Low forward voltage drop
• Low leakage current
• Specific for output and snubber operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
trr
TJ max.
Diode variation
DO-221AC (SlimSMA)
3A
100 V
0.93 V
30 ns
175 °C
Single die
DESCRIPTION / APPLICATONS
State of the art hyperfast recovery rectifiers specifically
designed with optimized performance of forward voltage
drop and hyperfast recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in snubber, boost,
lighting, as high frequency rectifiers and freewheeling
diodes.
The extremely optimized stored charge and low recovery
current minimize the switching losses and reduce power
dissipation in the switching element.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Operating junction and storage temperatures
VRRM
IF(AV)
IFSM
TJ, TStg
Note
(1) Device on PCB with 8 mm x 16 mm soldering lands
TEST CONDITIONS
TC = 145 °C (1)
TJ = 25 °C
VALUES
100
3
85
-65 to 175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Breakdown voltage,
blocking voltage
Forward voltage
Reverse leakage current
Junction capacitance
VBR,
VR
VF
IR
CT
IR = 100 μA
IF = 3 A
IF = 3 A, TJ = 125 °C
VR = VR rated
TJ = 125 °C, VR = VR rated
VR = 100 V
MIN.
100
-
-
-
-
-
TYP.
-
0.86
0.74
-
0.5
13
MAX.
-
0.93
0.78
2
8
-
UNITS
V
μA
pF
Revision: 20-Nov-14
1 Document Number: 94903
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
DO-221AC (SlimSMA)
DIMENSIONS in inches (millimeters)
Outline Dimensions
Vishay Semiconductors
0.106 (2.70)
0.098 (2.50)
Cathode Band
0.039 (1.00)
0.035 (0.90)
0.171 (4.35)
0.163 (4.15)
0.211 (5.35)
0.199 (5.05)
0.057 (1.45)
0.049 (1.25)
0.047 (1.20) Typ.: 0.019 (0.48)
0.030 (0.75)
Mounting Pad Layout
0.012 (0.30)
0.006 (0.15)
0.047 (1.20)
MIN.
0.123 (3.12) MAX.
0.217 (5.52) REF.
0.060 (1.52)
MIN.
0.047 (1.20)
MIN.
Revision: 21-Jul-14
1 Document Number: 95571
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet VS-3EJH01-M3.PDF ] | |
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