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PDF 2KBP10M Data sheet ( Hoja de datos )

Número de pieza 2KBP10M
Descripción Glass Passivated Single-Phase Bridge Rectifier
Fabricantes Vishay 
Logotipo Vishay Logotipo



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No Preview Available ! 2KBP10M Hoja de datos, Descripción, Manual

www.vishay.com
2KBPxxM, 3N25x
Vishay General Semiconductor
Glass Passivated Single-Phase Bridge Rectifier
~
~
+
Case Style KBPM
+~~−
PRIMARY CHARACTERISTICS
Package
KBPM
IF(AV)
VRRM
IFSM
IR
VF at IF = 3.14 A
TJ max.
Diode variations
2.0 A
50 V to 1000 V
60 A
5 μA
1.1 V
165 °C
In-Line
FEATURES
• UL recognition file number E54214
• Ideal for printed circuit board
• High surge current capability
• High case dielectric strength
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for switching power supply, home appliances, office
equipment, and telecommunication applications.
MECHANICAL DATA
Case: KBPM
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E4 - RoHS-compliant, commercial grade
Terminals: Silver plated leads, solderable per
J-STD-002 and JESD22-B102
Polarity: As marked on body
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
2KBP005M 2KBP01M 2KBP02M 2KBP04M 2KBP06M 2KBP08M 2KBP10M
SYMBOL
UNIT
3N253
3N254 3N255 3N256 3N257 3N258 3N259
Maximum repetitive peak reverse
voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
VRMS
35
70 140 280 420 560 700 V
Maximum DC blocking voltage
VDC
50
100
200
400
600
800
1000
V
Maximum average forward output
rectified current at TA = 55 °C
IF(AV)
2.0
A
Peak forward surge current single half
sine-wave superimposed on rated
load
IFSM
60 A
Rating for fusing (t < 8.3 ms)
I2t
15 A2s
Operating junction and storage
temperature range
TJ, TSTG
- 55 to + 165
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST
CONDITIONS
2KBP005M
3N253
2KBP01M
3N254
2KBP02M
3N255
2KBP04M
3N256
2KBP06M
3N257
2KBP08M
3N258
2KBP10M
3N259
UNIT
Maximum instantaneous
forward voltage drop per
diode
VF 3.14 A
1.1 V
Maximum DC reverse
current at rated DC
blocking voltage per diode
IR
TA = 25 °C
TA = 125 °C
5.0
500
μA
Typical junction
capacitance per diode
TJ
4.0 V,
1 MHz
25 pF
Revision: 04-Jul-13
1 Document Number: 88532
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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