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PDF SDZNMMBHER-008G Data sheet ( Hoja de datos )

Número de pieza SDZNMMBHER-008G
Descripción 4LC 3V NAND Flash Memory
Fabricantes SanDisk 
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43nm
8GB (32Gb x 2-die)
16GB (32Gb x 4-die)
32GB (32Gb x 8-die)
4LC 3V NAND Flash Memory Data Sheet
Preliminary Version
Rev 1.3
March 11, 2009
Part Numbers: SDZNMMBHER-008G
SDZNMMCHER-016G
SDZNMMDHER-032G
Proprietary and Confidential
Copyright © 2009 by SanDisk Corporation and its applicable affiliates. All rights reserved.
This specification is confidential and is subject to any SanDisk Corporation handbooks or terms of use
provided or made available to the customer. This specification is subject to change and/or being updated
without notice. The customer assumes sole and exclusive responsibility for compliance with safety,
environmental, export, trade, and other applicable laws and regulations with respect to this specification.
In addition, the customer assumes sole and exclusive responsibility for any use, embedded or otherwise,
of device(s) described by this specification in any medical, aviation, nuclear, or ultra-hazardous
applications, as well as in applications that could cause property damage, bodily injury, or death.
All specifications are subject to change without notice.
For memory capacity, 1 megabyte (MB) = 1 million bytes, and 1 gigabyte (GB) = 1 billion bytes.
Some of the listed capacity is used for formatting and other functions, and thus is not available for
data storage.

1 page




SDZNMMBHER-008G pdf
SDZNMM(B/C/D)HER-0(08/16/32)G
43nm 8GB / 16GB / 32GB 4LC 3V NAND Flash Memory Data Sheet
1. Device Overview
1.1 Description
The 43nm 8GB / 16GB / 32GB 4LC 3V NAND Flash Memory contains 2, 4, or 8 32Gb NAND Flash
Memory dies in a 52-lead 14 x 18 LGA package.
Each 32Gb NAND Flash Memory has two 8568-byte static registers, which allow program and read data
to be transferred between the register and the memory cell array in 8568-byte increments. The device is
organized as (8192 + 376) bytes × 128 pages × 4096 blocks. A single block unit consists of 1 Mbyte +
47 Kbytes = 8568 bytes x 128 pages.
This serial-type memory device makes use of I/O pins for command inputs, as well as for both address
and data input/output. Erase and Program operations are executed automatically, making the device
highly suited for applications such as solid-state file storage, image file memory for still cameras, voice
recording, and other systems that require high-density non-volatile memory data storage.
1.2 Features
Feature
32Gb (4LC)
Organization:
Memory Cell Array
Number of Registers
Number of Planes
Block Size
Page Size
Number of Pages per Block
8568 x 512K x 8 per die
8568 x 8 per die
2 per die
(1M + 47K) bytes
(8192 + 376) bytes = 8568 bytes
128
Modes
Read, Multi Page Read, Single Page Program, Auto Page Program,
Multi Page Program, Page Copy, Multi Page Copy, Single Block
Erase, Multi Block Erase, ID Read, Status Read, Reset
Mode Control
Serial input/output
Command control
Number of Valid Blocks
Max 4096 blocks per die; Min 3933 blocks per die
Power Supply
VCC = 2.7V to 3.6V
Access Time
Cell Array to Register: 200 μs max
Serial Read Cycle: 25 ns min
Program/Erase Time
Auto Page Program: 1600 μs/page typ.
Single Block Erase: 3 ms/block typ.
Operating Current *
Read (30 ns cycle): 50 mA max
Program (avg.): 50 mA max
Erase (avg.): 50 mA max
Standby: 50 μA max
Package
14mm x 18mm x 1.0mm LGA 52-Pin
* Measured per selected active die at VCC = 3.6V, 30 ns Read/Write cycle time.
Preliminary Version, rev1.3
SanDisk Proprietary and Confidential
page 5

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SDZNMMBHER-008G arduino
SDZNMM(B/C/D)HER-0(08/16/32)G
43nm 8GB / 16GB / 32GB 4LC 3V NAND Flash Memory Data Sheet
1.9 Write Protect Signal
Erase and Program operations are automatically reset when the Write Protect signal goes Low. The
operations are enabled and disabled, as follows:
Preliminary Version, rev1.3
SanDisk Proprietary and Confidential
page 11

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