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PDF RJK2017DPP-M0 Data sheet ( Hoja de datos )
| Número de pieza | RJK2017DPP-M0 | |
| Descripción | MOS FET | |
| Fabricantes | Renesas | |
| Logotipo |  |
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RJK2017DPP-M0
200V - 45A - MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS(on) = 0.036 typ. (at ID = 22.5 A, VGS = 10 V, Ta = 25C)
Low leakage current
High speed switching
Outline
RENESAS Package code: PRSS0003AF-A
(Package name: TO-220FL)
1
23
G
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
VDSS
VGSS
ID Note4
ID (pulse) Note1
IDR
IAP Note3
EAR Note3
Pch Note2
Channel to case thermal impedance
ch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C
3. STch = 25C, Tch 150C
4. Limited by maximum safe operation area
Preliminary Datasheet
R07DS0664EJ0100
Rev.1.00
Feb 03, 2012
D
1. Gate
2. Drain
3. Source
S
Ratings
200
30
45
135
45
12
9.6
30
4.17
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
R07DS0664EJ0100 Rev.1.00
Feb 03, 2012
Page 1 of 6
1 page  
RJK2017DPP-M0
Normalized Transient Thermal Impedance vs. Pulse Width
3
D=1
1
0.5
0.3 0.2
0.1
0.1
0.05
0.03 0.02
0.01
0.01
1shot
pulse
0.003
0.001
10 μ
100 μ
Tc = 25°C
θch – c(t) = γ s (t) • θ ch – c
θch – c = 4.17°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (s)
Preliminary
Switching Time Test Circuit
Vin Monitor
10 Ω
Vin
10 V
D.U.T.
Vout
Monitor
RL
VDD
= 100 V
Waveform
90%
Vin
Vout
10%
10%
10%
td(on)
90%
tr
90%
td(off)
tf
R07DS0664EJ0100 Rev.1.00
Feb 03, 2012
Page 5 of 6
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet RJK2017DPP-M0.PDF ] | |
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